SKM150GAL12V SEMIKRON, SKM150GAL12V Datasheet
SKM150GAL12V
Specifications of SKM150GAL12V
Related parts for SKM150GAL12V
SKM150GAL12V Summary of contents
Page 1
... SKM150GAL12V SEMITRANS ® 2 SKM150GAL12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • ...
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... SKM150GAL12V SEMITRANS ® 2 SKM150GAL12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • ...
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... SKM150GAL12V Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 3 – 23.03.2011 = ...
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... SKM150GAL12V Fig. 7: Typ. switching times vs Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 3 – 23.03.2011 G CC'+EE' ...
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... SKM150GAL12V SEMITRANS 2 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...