Transistor

 

SKM150GB12V

Manufacturer Part NumberSKM150GB12V
DescriptionTransistor
ManufacturerSEMIKRON
SKM150GB12V datasheets

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Specifications of SKM150GB12V

Dc Collector Current225ACollector Emitter Voltage Vces1.2kV
Collector Emitter Voltage V(br)ceo940mVNo. Of Pins7
Package / CaseSEMITRANS 2Family/systemSEMITRANS
Voltage (v)1200Current (a)150
Chip-typeV-IGBTCaseSEMITRANS 2
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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SKM150GB12V
SEMITRANS
®
2
SKM150GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited to
T
= 125°C max, recomm.
c
T
= -40 ... +150°C, product
op
rel. results valid for T
= 150°
j
GB
© by SEMIKRON
Absolute Maximum Ratings
Symbol
Conditions
IGBT
V
T
= 25 °C
j
CES
T
= 25 °C
I
C
c
T
= 175 °C
j
T
= 80 °C
c
I
Cnom
I
I
= 3xI
CRM
CRM
Cnom
V
GES
V
= 720 V
CC
V
≤ 20 V
T
= 125 °C
t
psc
GE
j
V
≤ 1200 V
CES
T
j
Inverse diode
I
T
= 25 °C
F
c
T
= 175 °C
j
T
= 80 °C
c
I
Fnom
I
I
= 3xI
FRM
FRM
Fnom
I
t
= 10 ms, sin 180°, T
= 25 °C
p
j
FSM
T
j
Module
T
= 80 °C
I
terminal
t(RMS)
T
stg
V
AC sinus 50Hz, t = 1 min
isol
Characteristics
Symbol
Conditions
IGBT
I
= 150 A
T
= 25 °C
V
C
CE(sat)
j
V
= 15 V
GE
T
= 150 °C
chiplevel
j
V
T
= 25 °C
j
CE0
T
= 150 °C
j
T
= 25 °C
r
j
CE
V
= 15 V
GE
T
= 150 °C
j
V
V
=V
, I
= 6 mA
GE(th)
GE
CE
C
I
T
= 25 °C
V
= 0 V
j
CES
GE
V
= 1200 V
T
= 150 °C
CE
j
C
f = 1 MHz
ies
V
= 25 V
CE
f = 1 MHz
C
oes
V
= 0 V
GE
C
f = 1 MHz
res
Q
V
= - 8 V...+ 15 V
G
GE
R
Gint
V
= 600 V
t
T
= 150 °C
CC
d(on)
j
I
= 150 A
T
= 150 °C
t
C
r
j
V
= ±15 V
GE
E
T
= 150 °C
R
= 1.5 
j
on
G on
T
= 150 °C
t
R
= 1.5 
d(off)
j
G off
di/dt
= 4400 A/µs
t
T
= 150 °C
on
j
f
di/dt
= 1800 A/µs
off
du/dt
= 8100 V/
E
T
= 150 °C
off
j
off
µs
R
per IGBT
th(j-c)
Rev. 4 – 23.03.2011
Values
Unit
1200
V
231
A
176
A
150
A
450
A
-20 ... 20
V
10
µs
-40 ... 175
°C
189
A
141
A
150
A
450
A
900
A
-40 ... 175
°C
200
A
-40 ... 125
°C
4000
V
min.
typ.
max.
Unit
1.75
2.20
V
2.20
2.50
V
0.94
1.04
V
0.88
0.98
V
5.40
7.7
m
8.80
10.13
m
5.5
6
6.5
V
0.1
0.3
mA
mA
9
nF
0.89
nF
0.884
nF
1650
nC
5.0
258
ns
32
ns
13.5
mJ
388
ns
62
ns
14.2
mJ
0.19
K/W
1

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SKM150GB12V Summary of contents

  • Page 1

    ... SKM150GB12V SEMITRANS ® 2 SKM150GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • ...

  • Page 2

    ... SKM150GB12V SEMITRANS ® 2 SKM150GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • ...

  • Page 3

    ... SKM150GB12V Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 4 – 23.03.2011 = ...

  • Page 4

    ... SKM150GB12V Fig. 7: Typ. switching times vs Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 4 – 23.03.2011 G CC'+EE' ...

  • Page 5

    ... SKM150GB12V SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...

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