Transistor

 

SKM150GM12T4G

Manufacturer Part NumberSKM150GM12T4G
DescriptionTransistor
ManufacturerSEMIKRON
SKM150GM12T4G datasheets

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Specifications of SKM150GM12T4G

Dc Collector Current229ACollector Emitter Voltage Vces1.2kV
Collector Emitter Voltage V(br)ceo940mVNo. Of Pins7
Package / CaseSEMITRANS 3Family/systemSEMITRANS
Voltage (v)1200Current (a)150
Chip-typeIGBT 4 Fast (Trench)CaseSEMITRANS 3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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SKM150GM12T4G
®
SEMITRANS
3
Fast IGBT4 Modules
SKM150GM12T4G
Features
• V
with positive temperature
CE(sat)
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
Typical Applications
• Matrix Inverter
Remarks
• Case temperature limited to
T
= 125°C max, recomm.
c
T
= -40 ... +150°C, product
op
rel. results valid for T
= 150°
j
GM
© by SEMIKRON
Absolute Maximum Ratings
Symbol
Conditions
IGBT
V
CES
I
T
= 25 °C
c
C
T
= 175 °C
j
T
= 80 °C
c
I
Cnom
I
I
= 3xI
CRM
CRM
Cnom
V
GES
V
= 800 V
CC
≤ 15 V
t
V
T
= 150 °C
psc
GE
j
≤ 1200 V
V
CES
T
j
Inverse diode
T
= 25 °C
I
c
F
T
= 175 °C
j
T
= 80 °C
c
I
Fnom
I
I
= 3xI
FRM
FRM
Fnom
t
= 10 ms, sin 180°, T
= 25 °C
I
FSM
p
j
T
j
Module
I
t(RMS)
T
stg
V
AC sinus 50Hz, t = 1 min
isol
Characteristics
Symbol
Conditions
IGBT
I
= 150 A
V
T
= 25 °C
C
j
CE(sat)
V
= 15 V
GE
T
= 150 °C
j
chiplevel
T
= 25 °C
V
CE0
j
T
= 150 °C
j
r
T
= 25 °C
CE
j
V
= 15 V
GE
T
= 150 °C
j
V
V
=V
, I
= 6 mA
GE(th)
GE
CE
C
T
= 25 °C
I
V
= 0 V
CES
j
GE
V
= 1200 V
T
= 150 °C
CE
j
f = 1 MHz
C
ies
V
= 25 V
CE
C
f = 1 MHz
oes
V
= 0 V
GE
f = 1 MHz
C
res
Q
V
= - 8 V...+ 15 V
GE
G
R
T
= 25 °C
Gint
j
T
= 150 °C
t
V
= 600 V
d(on)
j
CC
I
= 150 A
t
T
= 150 °C
C
j
r
V
= ±15 V
GE
T
= 150 °C
E
on
j
= 1 Ω
R
G on
t
T
= 150 °C
= 1 Ω
j
d(off)
R
G off
T
= 150 °C
t
di/dt
= 3400 A/µs
f
j
on
di/dt
= 1750 A/µs
E
T
= 150 °C
off
j
off
R
per IGBT
th(j-c)
Rev. 0 – 22.06.2009
Values
Unit
1200
V
229
A
177
A
150
A
450
A
-20 ... 20
V
10
µs
-40 ... 175
°C
187
A
140
A
150
A
450
A
774
A
-40 ... 175
°C
500
A
-40 ... 125
°C
4000
V
min.
typ.
max.
Unit
1.85
2.1
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
7.0
8.0
mΩ
10.3
11.0
mΩ
5
5.8
6.5
V
0.1
0.3
mA
mA
8.8
nF
0.58
nF
0.47
nF
850
nC
Ω
5.0
180
ns
42
ns
19.2
mJ
410
ns
72
ns
15.8
mJ
0.19
K/W
1

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SKM150GM12T4G Summary of contents

  • Page 1

    ... SKM150GM12T4G ® SEMITRANS 3 Fast IGBT4 Modules SKM150GM12T4G Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC ...

  • Page 2

    ... SKM150GM12T4G ® SEMITRANS 3 Fast IGBT4 Modules SKM150GM12T4G Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC ...

  • Page 3

    ... SKM150GM12T4G Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 0 – 22.06.2009 = ...

  • Page 4

    ... SKM150GM12T4G Fig. 7: Typ. switching times vs. I Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: CAL diode forward characteristic Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 0 – 22.06.2009 G © by SEMIKRON ...

  • Page 5

    ... SKM150GM12T4G Semitrans 3 GM This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 0 – 22.06.2009 5 ...

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