SKM50GB12V SEMIKRON, SKM50GB12V Datasheet

Transistor

SKM50GB12V

Manufacturer Part Number
SKM50GB12V
Description
Transistor
Manufacturer
SEMIKRON
Datasheet

Specifications of SKM50GB12V

Dc Collector Current
79A
Collector Emitter Voltage Vces
1.2kV
Collector Emitter Voltage V(br)ceo
940mV
No. Of Pins
7
Package / Case
SEMITRANS 2
Family/system
SEMITRANS
Voltage (v)
1200
Current (a)
50
Chip-type
V-IGBT
Case
SEMITRANS 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SKM50GB12V
Manufacturer:
Semikron
Quantity:
1 000
Part Number:
SKM50GB12V
Manufacturer:
SEMIKRON
Quantity:
20 000
SKM50GB12V
SKM50GB12V
Target Data
Features
• V
• High short circuit capability, self
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
• Isolated copper baseplate using DBC
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
© by SEMIKRON
SEMITRANS
coefficient
limiting to 6 x Icnom
creepage distances (20 mm)
Technology (Direct Copper Bonding)
CE(sat)
with positive temperature
GB
®
2
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 0 – 23.12.2009
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
I
V
R
R
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 50 A
= 50 A
=V
= 1200 V
= 25 V
= 720 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= 600 V
= ±15 V
= 3xI
= 3xI
≤ 1200 V
= 13 Ω
= 13 Ω
CE
, I
Fnom
Cnom
C
= 2 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 125 °C
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
6
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
0.295
1200
4000
typ.
1.85
0.94
0.88
18.2
26.4
0.30
150
150
270
200
540
2.2
6.5
0.1
4.0
79
60
50
10
65
49
50
3
5
4
max.
2.65
1.25
1.22
21.0
28.6
0.53
2.3
0.3
7
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1

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SKM50GB12V Summary of contents

Page 1

... SKM50GB12V ® SEMITRANS 2 SKM50GB12V Target Data Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • ...

Page 2

... SKM50GB12V ® SEMITRANS 2 SKM50GB12V Target Data Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • ...

Page 3

... SKM50GB12V SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...

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