IGBT, 600V, TO-3P(N)

 

GT30J324

Manufacturer Part NumberGT30J324
DescriptionIGBT, 600V, TO-3P(N)
ManufacturerToshiba
GT30J324 datasheets

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Specifications of GT30J324

Transistor TypeIGBTDc Collector Current30A
Collector Emitter Voltage Vces2.45VPower Dissipation Max170W
Collector Emitter Voltage V(br)ceo600VOperating Temperature Range-55°C To +150°C
TransistorRoHS CompliantPower Dissipation Pd170W
Rohs CompliantYes  
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications
Fast Switching Applications
•
The 4th generation
•
Enhancement-mode
•
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: t
= 0.05 µs (typ.)
f
Low switching loss : E
= 1.00 mJ (typ.)
on
: E
= 0.80 mJ (typ.)
off
•
Low saturation voltage: V
CE (sat)
•
FRD included between emitter and collector
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1 ms
DC
Emitter-collector forward
current
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Equivalent Circuit
Collector
Gate
Emitter
GT30J324
= 2.0 V (typ.)
Symbol
Rating
Unit
V
600
V
CES
V
±20
V
GES
I
30
C
A
I
60
CP
I
30
F
A
I
60
FM
P
170
W
C
T
150
°C
j
T
−55 to 150
°C
stg
Symbol
Max
Unit
R
0.735
°C/W
th (j-c)
R
1.90
°C/W
th (j-c)
1
GT30J324
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
2002-04-19

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GT30J324 Summary of contents

  • Page 1

    ... Collector Gate Emitter GT30J324 = 2.0 V (typ.) Symbol Rating Unit V 600 V CES V ±20 V GES 170 150 ° −55 to 150 °C stg Symbol Max Unit R 0.735 °C/W th (j-c) R 1.90 °C/W th (j-c) 1 GT30J324 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) 2002-04-19 ...

  • Page 2

    ... E off di/dt = −100 A/µ 10 (off) 10 GT30J324 Min Typ. Max ― ― ±500 ― ― 1.0 3.5 ― 6.5 ― 2.0 2.45 ― 4650 ― ― 0.09 ― ― 0.07 ― ― 0.24 ― ― 0.30 ― ― 0.05 ― (Note 1) ― ...

  • Page 3

    ... Common emitter Tc = 25° Gate-emitter voltage V ( – Common emitter 125°C − Gate-emitter voltage V ( Gate-emitter voltage Gate-emitter voltage V 4 Common emitter −60 −20 Case temperature Tc (°C) 3 GT30J324 V – Common emitter Tc = −40° ( – Common emitter Tc = 125° ( – (sat 100 140 2002-04-19 ...

  • Page 4

    ... Switching time off t d (off) 0 0.1 0.03 0.01 1000 0 5 Switching loss 0.3 E off 0.1 0.03 0.01 1000 GT30J324 , – (on Collector current I ( – I off f d (off) C Common emitter 300 Ω 25° 125°C (Note Collector current I ...

  • Page 5

    ... C oes 100 C res 0 300 1000 0 ( 0.3 0.1 3.0 3 100 50 µ 0 ≤ 125° Ω 0.1 300 1000 1 3 (V) Collector-emitter voltage V 5 GT30J324 – 200 300 100 120 160 200 Gate charge Q (nC – 1000 300 100 Common collector 30 di/dt = −100 A/µ 25° ...

  • Page 6

    ... FRD 0 10 IGBT −1 10 −2 10 − 25°C −4 10 −5 −4 −3 −2 − Pulse width t ( GT30J324 2002-04-19 ...

  • Page 7

    ... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 7 GT30J324 000707EAA 2002-04-19 ...

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