SST174-E3 Vishay, SST174-E3 Datasheet - Page 2

P CHANNEL JFET, 30V, SOT-23

SST174-E3

Manufacturer Part Number
SST174-E3
Description
P CHANNEL JFET, 30V, SOT-23
Manufacturer
Vishay
Datasheet

Specifications of SST174-E3

Breakdown Voltage Vbr
30V
Gate-source Cutoff Voltage Vgs(off) Max
10V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Continuous Drain Current Id
-135mA
Transistor Type
JFET
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
J/SST174/175/176/177 Series
Vishay Siliconix
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Storage Temperature
Operating Junction Temperature
Notes
a.
b.
www.vishay.com
9-2
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
Switching
Turn-On Time
Turn-Off Time
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
b
. . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
r
(BR)GSS
V
r
I
DS(on)
t
t
GS(off)
I
I
ds(on)
D(off)
C
C
d(on)
d(off)
DSS
GSS
GS(F)
g
g
I
e
t
rss
t
G
os
iss
fs
n
r
f
–55 to 150_C
–55 to 150_C
V
V
–50 mA
GS
DS
V
V
V
V
V
V
V
V
GS(L)
GS(L)
V
30 V
30 V
I
= 0 V, V
DS
V
= 0 V, I
V
Test Conditions
DG
DS
G
DG
DS
DS
I
GS
See Switching Circuit
DS
G
GS
DS
= –1 mA , V
= 1 mA , V
= –15 V, I
= –15 V, V
= –15 V, I
= –15 V, I
= –15 V, I
= –10 V, I
= 0 V, V
= –15 V, V
= 0 V, V
= 0 V, V
= 20 V, V
f = 1 MHz
f = 1 kHz
f = 1 kHz
D
GS
= 0 mA , f = 1 kHz
= 0 V, f = 1 MHz
DS
GS(H)
GS(H)
GS
D
D
D
D
D
DS
Lead Temperature (
Power Dissipation
Notes
a.
DS
GS
DS
GS
= –10 nA
= –0.1 V
= –1 mA
= –1 mA
= –1 mA
= –1 mA
= 10 V
= 0 V
T
T
= 0 V
= 10 V
= 0 V
= 0 V
A
A
= 10 V
Derate 2.8 mW/_C above 25_C
= 125_C
= 125_C
_
a
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
/
16
Typ
–0.01
0.01
0.01
–0.7
4.5
” from case for 10 sec.)
45
–5
20
20
20
10
15
10
20
5
5
a
Min
–20
30
5
J/SST174
Max
–135
10
–1
85
85
1
Limits
. . . . . . . . . . . . . . . . . . .
S-04030—Rev. E, 04-Jun-01
Min
Document Number: 70257
30
–7
3
J/SST175
Max
–70
125
125
–1
6
1
350 mW
300_C
Unit
PSCIA
mA
mS
nV
nA
mS
pF
ns
W
W
V
V
Hz

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