2N5116-E3 Vishay, 2N5116-E3 Datasheet
2N5116-E3
Specifications of 2N5116-E3
Related parts for 2N5116-E3
2N5116-E3 Summary of contents
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... Part Number V (V) GS(off) 2N5114 2N5115 2N5116 Low On-Resistance: 2N5114 < Fast Switching— High Off-Isolation—I : –10 pA D(off) D Low Capacitance Low Insertion Loss The 2N5114 series consists of p-channel JFET analog switches designed to provide low on-resistance, good off-isolation, and fast switching. These JFETs are optimized for use in complementary switching applications with the Vishay Siliconix 2N4856A series ...
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... kHz – MHz MHz MHz kHz See Switching Circuit Limits 2N5114 2N5115 2N5116 Min Max Min Max Min Max –30 –90 –15 –60 –5 –25 500 500 500 –500 –500 –500 –1 –1 –1 –1.3 –0.8 –0.6 75 100 150 –1 –1 – ...
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... Forward Transconductance and Output Conductance –100 18 I DSS –80 15 –60 12 –40 9 – 300 240 180 120 60 0 –100 – – 2N5114/5115/5116 Vishay Siliconix vs. Gate-Source Cutoff Voltage g and – kHz – Gate-Source Cutoff Voltage (V) GS(off) On-Resistance vs. Temperature I = – changes X 0.7%/ 1.5 V GS(off –35 – ...
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... Vishay Siliconix Output Characteristics – 1.5 V 0.5 V –1.6 1.0 V –1.2 –0.8 –0 –0.1 –0.2 –0.3 V – Drain-Source Voltage (V) DS Output Characteristics – GS(off) –20 –15 –10 – –4 –8 –12 V – Drain-Source Voltage (V) DS Capacitance vs. Gate-Source Voltage MHz iss 12 C rss ...
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... Input Capacitance 1.5 pF PRF 1 MHz See Typical Characteristics curves for changes. Document Number: 70260 S-04030—Rev. E, 04-Jun-01 _ – – –32 –24 –16 –8 0.8 1.0 100 V = – 2N5116 – GS( 390 W V GS(L) – –5 V 2N5114/5115/5116 Vishay Siliconix Transfer Characteristics –15 V GS(off –55_C A ...