2N5116-E3 Vishay, 2N5116-E3 Datasheet - Page 4

• Manufacturer Part Number: 2N5116-E3
• Description: P CHANNEL JFET, 45V, TO-206AA
• Manufacturer: Vishay

Specifications of 2N5116-E3

• Breakdown Voltage Vbr: 45V
• Gate-source Cutoff Voltage Vgs(off) Max: 4V
• Power Dissipation Pd: 500mW
• Operating Temperature Range: -55°C To +200°C
• No. Of Pins: 3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -25mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2N5114/5115/5116
Vishay Siliconix
www.vishay.com
9-4
–1.6
–1.2
–0.8
–0.4
–25
–20
–15
–10
–2
–5
30
24
18
12
0
0
6
0
0
0
0
1.0 V
0.5 V
Capacitance vs. Gate-Source Voltage
V
f = 1 MHz
V
DS
V
GS
GS(off)
–0.1
= 0 V
–4
C
4
= 0 V
iss
V
V
V
Output Characteristics
DS
Output Characteristics
DS
GS
= 3 V
C
– Drain-Source Voltage (V)
– Drain-Source Voltage (V)
rss
– Gate-Source Voltage (V)
–0.2
–8
8
–0.3
–12
1.5 V
12
V
GS(off)
V
–0.4
–16
16
GS
1.0 V
1.5 V
2.0 V
2.0 V
0.5 V
= 3 V
= 0 V
_
–0.5
–20
20
100 nA
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
–1.6
–1.2
–0.8
–0.4
–1.6
–1.2
–0.8
–0.4
–2
–2
0
0
0
V
0
0
GS
= 0 V
T
T
V
A
A
GS
= 125_C
= 25_C
= 0 V
–0.2
–0.1
–10
V
V
V
DS
DS
Output Characteristics
Output Characteristics
Gate Leakage Current
DG
– Drain-Source Voltage (V)
– Drain-Source Voltage (V)
– Drain-Gate Voltage (V)
1 V
–20
–0.4
–0.2
–1 mA
0.2 V
–10 mA
I
GSS
2 V
–1 mA
3 V
@ 125_C
–0.6
–0.3
–30
S-04030—Rev. E, 04-Jun-01
Document Number: 70260
0.4 V
I
I
V
D
GSS
= –10 mA
GS(off)
4 V
V
GS(off)
@ 25_C
–40
–0.8
–0.4
= 1.5 V
0.6 V
0.8 V
= 5 V
–1.0
–0.5
–50