2N5116-E3 Vishay, 2N5116-E3 Datasheet - Page 5

• Manufacturer Part Number: 2N5116-E3
• Description: P CHANNEL JFET, 45V, TO-206AA
• Manufacturer: Vishay

Specifications of 2N5116-E3

• Breakdown Voltage Vbr: 45V
• Gate-source Cutoff Voltage Vgs(off) Max: 4V
• Power Dissipation Pd: 500mW
• Operating Temperature Range: -55°C To +200°C
• No. Of Pins: 3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -25mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 70260
S-04030—Rev. E, 04-Jun-01
V
V
R
R
I
V
V
*Non-inductive
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
See Typical Characteristics curves for changes.
D(on)
DD
GG
L
G
GS(H)
GS(L)
*
*
–10
–80
–64
–48
–32
–16
INPUT PULSE
–8
–6
–4
–2
0
0
0
0
V
V
GS(off)
GS(off)
2N5114
–15 mA
–10 V
430 W
100 W
–11 V
20 V
= 1.5 V
= 5 V
0 V
0.2
1
125_C
T
V
V
Transfer Characteristics
Transfer Characteristics
A
GS
GS
= –55_C
T
125_C
A
– Gate-Source Voltage (V)
– Gate-Source Voltage (V)
= –55_C
0.4
2
25_C
2N5115
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
–7 mA
910 W
220 W
–6 V
12 V
–7 V
SAMPLING SCOPE
0 V
25_C
0.6
3
V
DS
V
DS
= –15 V
= –15 V
2N5116
0.8
–3 mA
390 W
4
–6 V
2 kW
–5 V
8 V
0 V
_
1.0
5
V
V
GS(H)
GS(L)
100
–40
–32
–16
–24
–8
10
0
1
10
0
51 W
V
0.1 mF
GS(off)
V
T
DS
A
125_C
= –55_C
= –10 V
V
= 3 V
1
Noise Voltage vs. Frequency
GG
100
V
Transfer Characteristics
GS
25_C
1.2 kW
1.2 kW
51 W
R
– Gate-Source Voltage (V)
–1 mA
G
f – Frequency (Hz)
2N5114/5115/5116
I
D
2
= –0.1 mA
Sampling
Scope
1 k
Vishay Siliconix
–V
3
DD
V
DS
R
L
10 k
= –15 V
4
www.vishay.com
7.5 kW
51 W
100 k
5
9-5