2N5116JANTX Vishay, 2N5116JANTX Datasheet
2N5116JANTX
Specifications of 2N5116JANTX
Related parts for 2N5116JANTX
2N5116JANTX Summary of contents
Page 1
... These JFETs are optimized for use in complementary switching applications with the Vishay Siliconix 2N4856A series. Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... Vishay Siliconix _ Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS Gate Reverse Current I GSS c Gate Operating Current I G Drain Cutoff Current I D(off) Drain-Source On-Voltage V DS(on) DS(on) Drain-Source r DS(on) On-Resistance Gate-Source V GS(F) Forward Voltage ...
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... Forward Transconductance and Output Conductance –100 18 I DSS –80 15 –60 12 –40 9 – 300 240 180 120 60 0 –100 – – 2N5114/5115/5116 Vishay Siliconix vs. Gate-Source Cutoff Voltage g and – kHz – Gate-Source Cutoff Voltage (V) GS(off) On-Resistance vs. Temperature I = – changes X 0.7%/ 1.5 V GS(off –35 – ...
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... Vishay Siliconix Output Characteristics – 1.5 V 0.5 V –1.6 1.0 V –1.2 –0.8 –0 –0.1 –0.2 –0.3 V – Drain-Source Voltage (V) DS Output Characteristics – GS(off) –20 –15 –10 – –4 –8 –12 V – Drain-Source Voltage (V) DS Capacitance vs. Gate-Source Voltage MHz iss 12 C rss ...
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... S-04030—Rev. E, 04-Jun-01 _ – – –32 –24 –16 –8 0.8 1.0 100 V = – 2N5116 – GS( 390 W V GS(L) – –5 V 2N5114/5115/5116 Vishay Siliconix Transfer Characteristics –15 V GS(off –55_C A 25_C 125_C – Gate-Source Voltage (V) GS Noise Voltage vs. Frequency I = –0 – – 100 ...