2N7002BKV NXP Semiconductors, 2N7002BKV Datasheet

MOSFET,NN CH,60V,0.34A,SOT666

2N7002BKV

Manufacturer Part Number
2N7002BKV
Description
MOSFET,NN CH,60V,0.34A,SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2N7002BKV

Module Configuration
Dual
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.6V
Power Dissipation
RoHS Compliant

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small
SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
Table 1.
[1]
Symbol
V
V
I
R
D
DS
GS
DSon
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
Rev. 2 — 22 September 2010
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Quick reference data
T
T
T
Conditions
V
T
V
I
D
amb
amb
amb
j
GS
GS
= 25 °C;
= 500 mA
= 10 V
= 10 V;
= 25 °C
= 25 °C
= 25 °C;
[1]
Min
-
-
-
-
Typ
-
-
-
1
Product data sheet
Max
60
±20
340
1.6
2
.
Unit
V
V
mA
Ω

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2N7002BKV Summary of contents

Page 1

... V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ...

Page 2

... T amb drain current amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Simplified outline Graphic symbol Marking code ZG Min - - [ ° 100 ° ...

Page 3

... T amb junction temperature ambient temperature storage temperature 017aaa001 75 125 175 T (°C) amb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Min = 25 °C [ °C [ °C [2] - −55 − ...

Page 4

... All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET 10 V (V) DS Min Typ [1] - ...

Page 5

... Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002BKV Product data sheet 60 V, 340 mA dual N-channel Trench MOSFET − − All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 017aaa060 (s) p 017aaa061 (s) p © ...

Page 6

... V GS turn-off delay time R G fall time source-drain voltage I S ≤ 300 μs; δ ≤ 0.01. p All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Min = 10 μ 250 μ 1 ° ...

Page 7

... V 3.0 4.0 V (V) DS Fig 7. 017aaa041 R (2) (3) (4) (5) 0.6 0.8 1.0 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET − (A) −4 10 (1) (2) (3) −5 10 −6 10 0.0 1.0 2 ° ...

Page 8

... Fig 11. Normalized drain-source on-state resistance 017aaa045 120 180 T (°C) amb Fig 13. Input, output and reverse transfer All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET 2.4 a 1.8 1.2 0.6 0.0 −60 0 ...

Page 9

... Q (nC °C amb Fig 15. Gate charge waveform definitions 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...

Page 10

... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition 2N7002BKV Product data sheet 60 V, 340 mA dual N-channel Trench MOSFET P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 006aaa812 © NXP B.V. 2010. All rights reserved ...

Page 11

... 1.3 1.7 0.3 1.0 0.5 1.1 1.5 0.1 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET detail 0.1 0.1 EUROPEAN PROJECTION SOT666 X ISSUE DATE 04-11-08 06-03-16 © NXP B.V. 2010. All rights reserved. ...

Page 12

... Reflow soldering is the only recommended soldering method. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET 0.4 0.3 0.25 (6×) (2×) (2×) 0.325 0.375 Dimensions in mm (4× ...

Page 13

... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date 2N7002BKV v.2 20100922 • Modifications: Table 2 • Table 6 “Thermal • Table 6 “Thermal 2N7002BKV v.1 20100610 2N7002BKV Product data sheet 60 V, 340 mA dual N-channel Trench MOSFET Data sheet status Product data sheet “ ...

Page 14

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV © NXP B.V. 2010. All rights reserved ...

Page 15

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 2N7002BKV © NXP B.V. 2010. All rights reserved ...

Page 16

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 22 September 2010 Document identifier: 2N7002BKV ...

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