2N7002PS NXP Semiconductors, 2N7002PS Datasheet
2N7002PS
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2N7002PS Summary of contents
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... V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ...
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... T amb drain current amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Simplified outline Graphic symbol [1] Marking code M8* Min - - [ ° 100 ° ...
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... T amb junction temperature ambient temperature storage temperature 017aaa001 75 125 175 T (°C) amb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Min = 25 °C [ °C [ °C [2] - −55 −65 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET 017aaa033 (1) (2) (3) (4) (5) (6) 10 ...
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... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002PS Product data sheet − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET 017aaa034 (s) p 017aaa035 ...
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... 250 μ 1 ° 150 ° ± [ 500 [ 200 300 mA 4 250 Ω Ω 115 mA 0.47 GS 2N7002PS Typ Max Unit - - V 1.75 2.4 V μ μ 100 nA Ω 1.3 2 Ω 1 1.6 400 - mS 0.6 0 0.75 1.1 V © NXP B.V. 2010. All rights reserved. ...
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... V 2.5 V 3.0 4.0 V (V) DS Fig 7. 017aaa019 R (2) (3) (4) (5) 0.6 0.8 1.0 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET − (A) −4 10 (1) (2) −5 10 − ° amb DS (1) minimum values ...
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... Fig 11. Per transistor: Normalized drain-source 017aaa023 120 180 T (°C) amb Fig 13. Per transistor: Input, output and reverse All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET 2.4 a 1.8 1.2 0.6 0.0 −60 0 ...
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... Q (nC °C amb Fig 15. Per transistor: Gate charge waveform 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...
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... Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 2N7002PS Product data sheet P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET 006aaa812 © NXP B.V. 2010. All rights reserved ...
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... 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-88 All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET 0.4 (2×) 0.6 (2×) Dimensions in mm 1.5 0.3 2.5 1.5 solder lands solder resist ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date 2N7002PS v.1 20100701 2N7002PS Product data sheet Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2N7002PS All rights reserved. Date of release: 1 July 2010 Document identifier: 2N7002PS ...