MOSFET, DUAL, NN, MICRO-8

IRF7501PBF

Manufacturer Part NumberIRF7501PBF
DescriptionMOSFET, DUAL, NN, MICRO-8
ManufacturerInternational Rectifier
IRF7501PBF datasheet
 


Specifications of IRF7501PBF

Module ConfigurationDualTransistor PolarityN Channel
Continuous Drain Current Id2.4ADrain Source Voltage Vds30V
On Resistance Rds(on)135mohmRds(on) Test Voltage Vgs4.5V
Threshold Voltage VgsRoHS Compliant  
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Next
Generation V Technology
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Ulrtra Low On-Resistance
Dual N-Channel MOSFET
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Very Small SOIC Package
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Low Profile (<1.1mm)
Available in Tape & Reel
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Fast Switching
Lead-Free
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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Maximum Power Dissipation„
D
A
Maximum Power Dissipation „
P
@T
= 70°C
D
A
Linear Derating Factor
V
Gate-to-Source Voltage Single Pulse tp<10µs
GSM
V
Gate-to-Source Voltage
GS
Peak Diode Recovery dv/dt ‚
dv/dt
TJ , TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Maximum Junction-to-Ambient „
R
θJA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
IRF7501PbF
HEXFET
1
8
S1
D1
2
7
G1
3
6
S2
4
5
G2
Top View
@ 10V
GS
@ 10V
GS
-55 to + 150
240 (1.6mm from case)
PD - 95345
®
Power MOSFET
V
=20V
DSS
D1
D2
D2
R
= 0.135Ω
DS(on)
Micro8
Max.
Units
20
V
2.4
1.9
A
19
1.25
W
0.8
W
0.01
W/°C
16
V
± 12
V
5.0
V/ns
°C
Max.
Units
100
°C/W
1
02/22/05

IRF7501PBF Summary of contents

  • Page 1

    ... Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Maximum Junction-to-Ambient „ R θJA All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . www.irf.com IRF7501PbF HEXFET ...

  • Page 2

    ... IRF7501PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

  • Page 3

    ... TOP 10 BOTTOM 1.5V 1 0.1 A 0.01 0.1 10 Fig 2. Typical Output Characteristics 100 150° 10V 0.1 A 3.5 4.0 0.4 Fig 7. Typical Source-Drain Diode IRF7501PbF VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( 25° 0.6 ...

  • Page 4

    ... IRF7501PbF 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.13 0.11 0.09 0.07 0.05 4 0.8 0.6 0.4 0 4.5V 0 100 120 140 160 Fig 6. Typical On-Resistance Vs. Drain Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate 5.0V ...

  • Page 5

    ... RESPONSE) 0.1 0.00001 0.0001 Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 1. SHORTED 100 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7501PbF = 16V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage Notes: 1. Duty factor Peak ...

  • Page 6

    ... IRF7501PbF Charge Fig 11a. Basic Gate Charge Waveform Fig 12a. Switching Time Test Circuit V DS 90% 10 Fig 12b. Switching Time Waveforms 6 12V V GS Fig 11b. Gate Charge Test Circuit + - ≤ 1 ≤ 0 d(on) r d(off) f Current Regulator Same Type as D.U.T. 50KΩ .2µF .3µ ...

  • Page 7

    ... Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ 5% www.irf.com • • • P. Period V GS Current di/dt Diode Recovery dv/ Forward Drop I SD IRF7501PbF + - =10V 7 ...

  • Page 8

    ... IRF7501PbF Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 0.08 (.003 NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. Micro8 Part Marking Information EXAMPLE: T HIS IS AN IRF7501 LOT CODE (XX) PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR ...

  • Page 9

    ... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 12.3 ( .484 ) 11.7 ( .461 ) FEED DIRECTION 14.40 ( .566 ) 12.40 ( .488 ) Data and specifications subject to change without notice. Qualifications Standards can be found on IR’s Web site. TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/05 IRF7501PbF 9 ...