SI4804BDY-T1-E3 Vishay, SI4804BDY-T1-E3 Datasheet

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SI4804BDY-T1-E3

Manufacturer Part Number
SI4804BDY-T1-E3
Description
N CHANNEL MOSFET, 30V, SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4804BDY-T1-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
7.5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
22mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.022 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4804BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4804BDY-T1-E3
Manufacturer:
MURATA
Quantity:
20 000
Part Number:
SI4804BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
SI4804BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4804BDY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72061
S10-0461-Rev. G, 22-Feb-10
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
G
G
S
S
(V)
1
1
2
2
1
2
3
4
Top View
Si4804BDY -T1-E3
Si4804BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
SO-8
0.030 at V
0.022 at V
R
DS(on)
J
a
= 150 °C)
a
Dual N-Channel 30 V (D-S) MOSFET
8
7
6
5
GS
GS
(Ω)
= 4.5 V
= 10 V
(Lead (Pb)-free)
D
D
D
D
1
1
2
2
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
7.5
6.5
T
T
L = 0.1 mH
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• PWM Optimized
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Symmetrical Buck-Boost DC/DC Converter
Symbol
Symbol
T
G
R
R
J
Definition
V
1
V
E
I
I
P
, T
DM
thJA
thJF
I
I
AS
GS
DS
AS
D
S
D
N-Channel MOSFET
stg
g
D
S
Tested
1
1
®
Power MOSFET
10 s
Typ.
7.5
6.0
1.7
2.0
1.3
52
93
35
- 55 to 150
Limits
± 20
30
30
10
5
Steady State
Max.
62.5
110
G
5.7
4.6
0.9
1.1
0.7
40
Vishay Siliconix
2
Si4804BDY
N-Channel MOSFET
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4804BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4804BDY -T1-E3 (Lead (Pb)-free) Si4804BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si4804BDY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... I Drain Current ( On-Resistance vs. Drain Current 7 Total Gate Charge (nC) g Gate Charge Document Number: 72061 S10-0461-Rev. G, 22-Feb- Si4804BDY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage ( Transfer Characteristics 1200 C 960 iss 720 480 C oss 240 C rss Drain-to-Source Voltage ( Capacitance 1.8 V ...

Page 4

... Si4804BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 0.0 - 0.2 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 = 250 µA 75 100 125 150 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72061. Document Number: 72061 S10-0461-Rev. G, 22-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4804BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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