SI4943CDY-T1-E3 Vishay, SI4943CDY-T1-E3 Datasheet
SI4943CDY-T1-E3
Specifications of SI4943CDY-T1-E3
Available stocks
Related parts for SI4943CDY-T1-E3
SI4943CDY-T1-E3 Summary of contents
Page 1
... Top View Ordering Information: Si4943CDY -T1-E3 (Lead (Pb)-free) Si4943CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Sorce-Drain Current Single Pulse Avalanche Current ...
Page 2
... Si4943CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
Page 3
... Q - Total Gate Charge (nC) g Gate Charge Document Number: 69985 S09-0704-Rev. B, 27-Apr-09 New Product 3000 2400 1800 1200 600 1.5 1 1.1 DS 0.9 0 Si4943CDY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 8.3 A ...
Page 4
... Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.5 2.3 2 1.9 1.7 1.5 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.04 0.03 0. °C J 0.01 0.9 1.2 100 = 250 µ ...
Page 5
... Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4943CDY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 ...
Page 6
... Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 - Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
Page 7
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...