2SK1317-E Renesas Electronics America, 2SK1317-E Datasheet

N CHANNEL MOSFET, 1.5KV, 2.5A TO-3P

2SK1317-E

Manufacturer Part Number
2SK1317-E
Description
N CHANNEL MOSFET, 1.5KV, 2.5A TO-3P
Manufacturer
Renesas Electronics America
Datasheet

Specifications of 2SK1317-E

Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
12ohm
Rds(on) Test Voltage Vgs
15V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK1317-E
Quantity:
3 600
Part Number:
2SK1317-E-Q
Manufacturer:
RICOH
Quantity:
34 000
2SK1317
Silicon N Channel MOS FET
Application
High speed power switching
Features
Outline
Rev.2.00 Sep 07, 2005 page 1 of 6
High breakdown voltage V
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
DSS
= 1500 V
1
2
3
G
S
D
(Previous: ADE-208-1268)
1. Gate
2. Drain
3. Source
(Flange)
REJ03G0929-0200
Sep 07, 2005
Rev.2.00

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2SK1317-E Summary of contents

Page 1

... Silicon N Channel MOS FET Application High speed power switching Features High breakdown voltage V = 1500 V DSS High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) Rev ...

Page 2

... Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle ° 2. Value Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current ...

Page 3

... Main Characteristics Power vs. Temperature Derating 120 Case Temperature T Typical Output Characteristics Pulse Test Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage V Rev.2.00 Sep 07, 2005 page 0.03 0.01 100 150 ( 100 (V) DS Pulse Test 0 (V) GS Maximum Safe Operation Area ...

Page 4

... Static Drain to Source on State Resistance vs. Temperature Pulse Test – Case Temperature T Body to Drain Diode Reverse Recovery Time 5,000 2,000 1,000 500 di/dt = 100 200 Pulse Test 100 50 0.05 0.1 0.2 0.5 Reverse Drain Current I Dynamic Input Characteristics 1,000 V = 250 V DD ...

Page 5

... 1.0 0.5 0.3 0.2 0.1 0.03 0.01 10 Switching Time Test Circuit Vin Monitor D.U.T 50 Vin 10 V Rev.2.00 Sep 07, 2005 page Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test – 0.4 0.8 1.2 Source to Drain Voltage V Normalized Transient Thermal Impedance vs. Pulse Width ...

Page 6

... PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part Name 2SK1317-E 360 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page Package Name MASS[Typ ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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