BS170F Diodes Inc, BS170F Datasheet
BS170F
Manufacturer Part Number
BS170F
Description
MOSFET, N CH, 60V, 150mA, SOT-23
Manufacturer
Diodes Inc
Datasheet
1.BS170F.pdf
(1 pages)
Specifications of BS170F
Transistor Polarity
N Channel
Continuous Drain Current Id
150mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
330mW
No. Of Pins
3
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BS170F
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
BS170FTA
Manufacturer:
Diodes/Zetex
Quantity:
41 128
Part Number:
BS170FTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
FEATURES
* 60Volt V
* R
PARTMARKING DETAIL – MV
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300
(3) Switching times measured with 50
Spice parameter data is available upon request for this device
For typical characteristics graphs refer to ZVN3306F datasheet.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Turn-On Delay Time (2)(3)
Turn-Off Delay Time (2)(3)
DS(ON)
= 5
DS
Ω
amb
=25°C
amb
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
BV
V
I
I
R
g
C
t
t
GSS
DSS
d(on)
d(off)
GS(th)
DS(on)
fs
iss
=25°C
Ω
DSS
source impedance and <5ns rise time on a pulse generator
60
0.8
3 - 54
amb
µ
s. Duty cycle
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
90
200
60
:T
= 25°C unless otherwise stated).
stg
3
10
0.5
5
10
10
≤
2% (2) Sample test.
V
V
nA
µ
Ω
mS V
pF
ns
ns
A
-55 to +150
I
I
V
V
V
V
f=1MHz
V
VALUE
D
D
GS
DS
GS
DS
DS
DD
0.15
±
330
=100
=1mA, V
60
3
20
=10V, V
=25V, V
=10V, I
=10V, I
=15V, V
≈
-15V, I
D
BS170F
µ
A, V
SOT23
DS
D
D
GS
GS
DS
=200mA
=200mA
GS
D
= V
=0V,
=0V
=600mA
=0V
=0V
GS
UNIT
mW
mA
°C
V
A
V
G
S
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