BSP297 Infineon Technologies, BSP297 Datasheet

N CH MOSFET, 200V, 600mA, SOT-223

BSP297

Manufacturer Part Number
BSP297
Description
N CH MOSFET, 200V, 600mA, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP297

Transistor Polarity
N Channel
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
200V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.4V
Package
SOT-223
Vds (max)
200.0 V
Rds (on) (max) (@10v)
1,800.0 mOhm
Rds (on) (max) (@4.5v)
3,000.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Feature
· N-Channel
· Enhancement mode
· Logic Level
· dv/dt rated
SIPMOS Ò Small-Signal-Transistor
Type
BSP297
BSP297
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
A
A
A
A
Pb-free lead plating; RoHS compliant
=0.66A, V
=25°C
=70°C
=25°C
=25°C
DS
=160V, di/dt=200A/µs, T
Package
P-SOT-223
PG-SOT-223
j
= 25 °C, unless otherwise specified
Tape and Reel Information
E6327: 1000 pcs/reel
L6327: 1000 pcs/reel
jmax
=150°C
Rev. 1.21
Page 1
Symbol
I
I
dv/dt
V
P
T
D
D puls
j ,
GS
tot
T
stg
Marking
BSP297
BSP297
-55... +150
55/150/56
Class 1
Product Summary
V
R
I
D
Value
DS
DS(on)
0.66
0.53
2.64
±20
1.8
6
PG-SOT-223
4
2006-09-28
0.66
200
1.8
BSP297
1
Unit
A
kV/µs
V
W
°C
2
VPS05163
V
W
A
3

Related parts for BSP297

BSP297 Summary of contents

Page 1

... Symbol puls dv/dt =150°C jmax Page 1 Product Summary DS(on PG-SOT-223 4 Marking BSP297 BSP297 Value 0.66 0.53 2.64 6 ±20 GS Class 1 1.8 tot T -55... +150 stg 55/150/56 BSP297 200 V W 1.8 0. VPS05163 Unit A kV/µ °C 2006-09-28 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.21 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSP297 Values Unit min. typ. max K 115 - 48 70 Values Unit min. typ. max. 200 - - V 0.8 1 ...

Page 3

... Q V =160V, I =0.66A =160V, I =0.66A 10V GS V (plateau) V =160V 0. =25° = =100V /dt=100A/µ Page 3 BSP297 Values min. typ. max. 0.47 0. 286 357 - 15.7 23.5 - 5.2 7.8 - 3.8 5 0.7 0.9 - 5.2 7.8 - 12.9 16.1 - 2 2.64 - 0.84 1 120 2006-09-28 Unit ...

Page 4

... Transient thermal impedance Z thJA parameter : K 100.0µ Page ³ BSP297 100 120 = BSP297 1 0 single pulse - 2006-09-28 BSP297 °C 160 0.50 0.20 0.10 0.05 0.02 0. ...

Page 5

... Typ. forward transconductance g = f(I DS(on)max fs parameter 2 Page ° 4.5 2.6V 2.8V W 3.4V 3.8V 4V 3.5 4. 10V 2.5 2 1 0.2 0.4 0.6 0 °C j 1.4 S 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.2 0.4 0.6 0.8 BSP297 2006-09-28 ...

Page 6

... Forward character. of reverse diode °C parameter Ciss Coss Page GS(th =400µ 2.2 V 98% 1.8 1.6 typ. 1.4 1 0.8 0.6 0.4 0.2 0 -60 - BSP297 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1.6 BSP297 °C 100 160 2 2006-09-28 ...

Page 7

... Typ. gate charge parameter 0.66 A pulsed BSP297 0 max 0 max 6 0 max Rev. 1.21 14 Drain-source breakdown voltage , V DS (BR)DSS = 25 °C j 245 235 230 225 220 215 210 205 200 195 190 185 180 Page BSP297 V -60 - 100 BSP297 °C 180 T j 2006-09-28 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.21 Page 8 BSP297 2006-09-28 ...

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