N CH MOSFET, 500V, 400mA, SOT-223

 

BSP299

Manufacturer Part NumberBSP299
DescriptionN CH MOSFET, 500V, 400mA, SOT-223
ManufacturerInfineon Technologies
BSP299 datasheets

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Specifications of BSP299

Transistor PolarityN ChannelContinuous Drain Current Id400mA
Drain Source Voltage Vds500VOn Resistance Rds(on)4ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ3V
PackageSOT-223Vds (max)500.0 V
Rds (on) (max) (@10v)4,000.0 mOhmRds (on) (max) (@4.5v)-
Rds (on) (max) (@2.5v)-Lead Free Status / RoHS StatusLead free / RoHS Compliant
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®
SIPMOS
Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• V
= 2.1 ... 4.0 V
GS(th)
Type
V
DS
BSP 299
500 V
Type
Ordering Code
BSP 299
Q67000-S225
Maximum Ratings
Parameter
Continuous drain current
T
= 44 °C
A
DC drain current, pulsed
T
= 25 °C
A
Avalanche energy, single pulse
I
= 1.2 A, V
= 50 V, R
D
DD
GS
L = 163 mH, T
= 25 °C
j
Gate source voltage
Power dissipation
T
= 25 °C
A
Semiconductor Group
I
R
Package
D
DS(on)
0.4 A
4
SOT-223
Tape and Reel Information
E6327
Symbol
I
D
I
Dpuls
E
AS
= 25
V
GS
P
tot
1
BSP 299
Pin 1
Pin 2
Pin 3
Pin 4
G
D
S
D
Marking
BSP 299
Values
Unit
A
0.4
1.6
mJ
130
20
V
W
1.8
Sep-12-1996

BSP299 Summary of contents

  • Page 1

    SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • 2.1 ... 4.0 V GS(th) Type V DS BSP 299 500 V Type Ordering Code BSP 299 Q67000-S225 Maximum Ratings Parameter Continuous drain current ...

  • Page 2

    Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...

  • Page 3

    Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...

  • Page 4

    Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage 0 ...

  • Page 5

    Power dissipation tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : ...

  • Page 6

    Typ. output characteristics parameter µ ° 0 tot 0.7 ...

  • Page 7

    Drain-source on-resistance (on) j parameter 0 (on 98% 5 typ -60 - ...

  • Page 8

    Avalanche energy parameter 1 163 mH GS 140 mJ 120 E 110 AS 100 ...

  • Page 9

    Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 BSP 299 Sep-12-1996 ...