IRF7220PBF International Rectifier, IRF7220PBF Datasheet

IRF7220PBF

Manufacturer Part Number

IRF7220PBF

Description

P CHANNEL MOSFET, -14V, 11A, SOIC

Manufacturer

International Rectifier

Datasheets

1.IRF7220.pdf (7 pages)

2.IRF7220PBF.pdf (4 pages)

Specifications of IRF7220PBF

Transistor Polarity

P Channel

Continuous Drain Current Id

11A

Drain Source Voltage Vds

-14V

On Resistance Rds(on)

12mohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs Typ

-600mV

Channel Type

Current, Drain

±11 A

Gate Charge, Total

84 nC

Package Type

SO-8

Polarization

P-Channel

Power Dissipation

2.5 W

Resistance, Drain To Source On

0.0082 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

140 ns

Time, Turn-on Delay

19 ns

Transconductance, Forward

8.4 S

Voltage, Breakdown, Drain To Source

-14 V

Voltage, Drain To Source

–12 V

Voltage, Forward, Diode

-1.2 V

Voltage, Gate To Source

±12 V

Configuration

Single Quad Drain Triple Source

Resistance Drain-source Rds (on)

12 mOhms

Drain-source Breakdown Voltage

- 12 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

- 11 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8

Fall Time

1040 ns

Gate Charge Qg

84 nC

Minimum Operating Temperature

- 55 C

Rise Time

420 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7220PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 7
Download datasheet (82Kb)

Absolute Maximum Ratings

Thermal Resistance

Description

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infrared, or wave soldering techniques.

www.irf.com

@ T

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

STG

= 70°C

= 25°C

= 70°C

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy„

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Power Dissipation

Parameter

@ -4.5V

T op V ie w

HEXFET

-55 to + 150

Max.

±8.8

0.02

±11

±88

110

± 12

-14

2.5

1.6

SO-8

IRF7220

DS(on)

Power MOSFET

DSS

= 0.012

PD- 91850C

= -14V

Units

W/°C

°C/W

°C

7/16/99

Related parts for IRF7220PBF

IRF7220PBF Summary of contents

Page 1

... Surface Mount Available in Tape & Reel l Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ...

Page 2

IRF7220 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7220PBF International Rectifier, IRF7220PBF Datasheet

IRF7220PBF

Specifications of IRF7220PBF

Available stocks

Related parts for IRF7220PBF

IRF7220PBF Summary of contents

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