N CH MOSFET, 500V, 20A, TO-220AB

IRFB20N50KPBF

Manufacturer Part NumberIRFB20N50KPBF
DescriptionN CH MOSFET, 500V, 20A, TO-220AB
ManufacturerVishay
IRFB20N50KPBF datasheet
 


Specifications of IRFB20N50KPBF

Transistor PolarityN ChannelContinuous Drain Current Id20A
Drain Source Voltage Vds500VOn Resistance Rds(on)250mohm
Rds(on) Test Voltage Vgs10VLeaded Process CompatibleYes
Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs250 mOhm @ 12A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C20AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs110nC @ 10VInput Capacitance (ciss) @ Vds2870pF @ 25V
Power - Max280WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Minimum Operating Temperature- 55 C
ConfigurationSingleResistance Drain-source Rds (on)0.25 Ohm @ 10 V
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current20 APower Dissipation280000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFB20N50KPBF
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Applications
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency
l
Circuits
Lead-Free
l
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
l
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l
Fully Characterized Capacitance and Avalanche Voltage
l
and Current
Low R
l
DS(on)
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current 
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt ƒ
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
Parameter
E
Single Pulse Avalanche Energy‚
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
Thermal Resistance
Symbol
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient
θJA
Document Number: 91101
IRFB20N50KPbF
SMPS MOSFET
HEXFET
V
DSS
500V
@ 10V
GS
@ 10V
GS
-55 to + 150
Typ.
–––
–––
–––
Typ.
–––
0.50
–––
PD - 94984
®
Power MOSFET
R
typ.
I
DS(on)
D
0.21Ω
20A
TO-220AB
Max.
Units
20
12
A
80
280
W
2.2
W/°C
± 30
V
6.9
V/ns
300
°C
10
N
Max.
Units
330
mJ
20
A
28
mJ
Max.
Units
0.45
–––
°C/W
58
2/5/04
www.vishay.com
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IRFB20N50KPBF Summary of contents

  • Page 1

    ... E Repetitive Avalanche Energy AR Thermal Resistance Symbol Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Document Number: 91101 IRFB20N50KPbF SMPS MOSFET HEXFET V DSS 500V @ 10V GS @ 10V GS - 150 Typ. ––– ––– ––– Typ. ––– ...

  • Page 2

    ... Fig. 10 „ 25V DS pF ƒ = 1.0MHz, See Fig 0V 1.0V, ƒ = 1.0MHz 0V 400V, ƒ = 1.0MHz 0V 400V … Conditions MOSFET symbol showing the integral reverse G p-n junction diode 25° 20A „ 25° 20A J F µC di/dt = 100A/µs „ S ≤ (BR)DSS www.vishay.com ...

  • Page 3

    ... Fig 4. Normalized On-Resistance VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 10V GS - 100 120 140 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 160 3 ...

  • Page 4

    ... Single Pulse 0.1 1.0 1.2 1 Fig 8. Maximum Safe Operating Area 21A V = 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE 100 Q , Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED (on) 100µsec 1msec 10msec 10 100 1000 Drain-toSource Voltage (V) www.vishay.com 120 10000 4 ...

  • Page 5

    ... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91101 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...

  • Page 6

    ... Fig 12c. Maximum Avalanche Energy 12V V Fig 13b. Gate Charge Test Circuit I D TOP 9.4A 17A BOTTOM 20A 50 75 100 125 J Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ .2µF .3µ D.U. 3mA Current Sampling Resistors www.vishay.com 150 DS 6 ...

  • Page 7

    ... D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Document Number: 91101 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% Fig 14. For N-Channel HEXFETS + - * V =10V www.vishay.com 7 ...

  • Page 8

    ... LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) PAR DAT E CODE 1997 INE C TAC Fax: (310) 252-7903 2/04 www.vishay.com 8 ...

  • Page 9

    ... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...