IRFB20N50KPBF Vishay, IRFB20N50KPBF Datasheet - Page 6

• Manufacturer Part Number: IRFB20N50KPBF
• Description: N CH MOSFET, 500V, 20A, TO-220AB
• Manufacturer: Vishay

Specifications of IRFB20N50KPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2870pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 280000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB20N50KPBF

Document Number: 91101
Fig 13a. Basic Gate Charge Waveform
Fig 12a. Unclamped Inductive Test Circuit
V
Fig 12b. Unclamped Inductive Waveforms
V
I
G
AS
Q
GS
R G
20V
V
V DS
GS
t p
Charge
Q
Q
I AS
GD
D.U.T
G
t p
0.01 Ω
L
V
15V
(BR)DSS
DRIVER
+
-
V DD
A
600
500
400
300
200
100
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
12V
V
GS
50
Same Type as D.U.T.
Current Regulator
.2µF
Vs. Drain Current
J
75
50KΩ
3mA
Current Sampling Resistors
.3µF
I
G
100
TOP
BOTTOM
www.vishay.com
D.U.T.
I
125
D
I D
+
-
9.4A
V
17A
20A
DS
150
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