IRFBG20PBF Vishay, IRFBG20PBF Datasheet
IRFBG20PBF
Specifications of IRFBG20PBF
Available stocks
Related parts for IRFBG20PBF
IRFBG20PBF Summary of contents
Page 1
... The TO-220 package is universially preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide S acceptance throughout the industry. N-Channel MOSFET TO-220 IRFBG20PbF SiHFBG20-E3 IRFBG20 SiHFBG20 = 25 °C, unless otherwise noted °C ...
Page 2
... IRFBG20, SiHFBG20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91123 S-81262-Rev. A, 07-Jul- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRFBG20, SiHFBG20 Vishay Siliconix www.vishay.com 3 ...
Page 4
... IRFBG20, SiHFBG20 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91123 S-81262-Rev. A, 07-Jul-08 ...
Page 5
... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91123 S-81262-Rev. A, 07-Jul- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFBG20, SiHFBG20 Vishay Siliconix D.U. d(on) r d(off www.vishay.com 5 ...
Page 6
... IRFBG20, SiHFBG20 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91123 ...
Page 7
... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91123. ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...