IRFBG30PBF Vishay, IRFBG30PBF Datasheet - Page 5

• Manufacturer Part Number: IRFBG30PBF
• Description: N CHANNEL MOSFET, 1KV, 3.1A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFBG30PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.1A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 5Ohm
• Drain-source On-volt: 1kV
• Gate-source Voltage (max): ±20V
• Drain Current (max): 3.1A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBG30PBF

Document Number: 91124
S11-0517-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
This datasheet is subject to change without notice.
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
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GS
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Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
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10 V
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IRFBG30, SiHFBG30
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t
r
D.U.T.
www.vishay.com/doc?91000
Vishay Siliconix
R
D
t
d(off)
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www.vishay.com
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DD
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