N CHANNEL MOSFET, 1KV, 3.1A, TO-220

IRFBG30PBF

Manufacturer Part NumberIRFBG30PBF
DescriptionN CHANNEL MOSFET, 1KV, 3.1A, TO-220
ManufacturerVishay
TypePower MOSFET
IRFBG30PBF datasheets
 


Specifications of IRFBG30PBF

Transistor PolarityN ChannelContinuous Drain Current Id3.1A
Drain Source Voltage Vds1kVOn Resistance Rds(on)5ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5 Ohm @ 1.9A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C3.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs80nC @ 10VInput Capacitance (ciss) @ Vds980pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Minimum Operating Temperature- 55 C
ConfigurationSingleResistance Drain-source Rds (on)5 Ohm @ 10 V
Drain-source Breakdown Voltage1000 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current3.1 APower Dissipation125000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res5Ohm
Drain-source On-volt1kVGate-source Voltage (max)±20V
Drain Current (max)3.1AOutput Power (max)Not RequiredW
Frequency (max)Not RequiredMHzNoise FigureNot RequireddB
Power GainNot RequireddBDrain EfficiencyNot Required%
Operating Temp Range-55C to 150COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3 +Tab
Package TypeTO-220ABLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names*IRFBG30PBF  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220
G
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 55 mH, R
DD
J
≤ 3.1 A, dI/dt ≤ 80 A/µs, V
≤ 600, T
c. I
SD
DD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91124
S-81145-Rev. A, 02-Jun-08
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
1000
• Repetitive Avalanche Rated
5.0
• Fast Switching
80
• Ease of Paralleling
10
• Simple Drive Requirements
42
Single
• Lead (Pb)-free Available
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
S
and low package cost of the TO-220 contribute to its wide
N-Channel MOSFET
acceptance throughout the industry.
TO-220
IRFBG30PbF
SiHFBG30-E3
IRFBG30
SiHFBG30
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 3.1 A (see fig. 12).
G
AS
≤ 150 °C.
J
IRFBG30, SiHFBG30
Vishay Siliconix
device
design,
low
on-resistance
SYMBOL
LIMIT
V
1000
DS
V
± 20
GS
3.1
I
D
2.0
I
12
DM
1.0
E
280
AS
I
3.1
AR
E
13
AR
P
125
D
dV/dt
1.0
T
, T
- 55 to + 150
J
stg
d
300
10
1.1
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N · m
1

IRFBG30PBF Summary of contents

  • Page 1

    ... The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance S and low package cost of the TO-220 contribute to its wide N-Channel MOSFET acceptance throughout the industry. TO-220 IRFBG30PbF SiHFBG30-E3 IRFBG30 SiHFBG30 = 25 °C, unless otherwise noted °C ...

  • Page 2

    ... IRFBG30, SiHFBG30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Fig Typical Output Characteristics, T Document Number: 91124 S-81145-Rev. A, 02-Jun- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRFBG30, SiHFBG30 Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRFBG30, SiHFBG30 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91124 S-81145-Rev. A, 02-Jun-08 ...

  • Page 5

    ... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91124 S-81145-Rev. A, 02-Jun- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFBG30, SiHFBG30 Vishay Siliconix D.U. d(on) r d(off www.vishay.com 5 ...

  • Page 6

    ... IRFBG30, SiHFBG30 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91124 ...

  • Page 7

    ... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91124. ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...