IRFBG30PBF Vishay, IRFBG30PBF Datasheet - Page 2

• Manufacturer Part Number: IRFBG30PBF
• Description: N CHANNEL MOSFET, 1KV, 3.1A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFBG30PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.1A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 5Ohm
• Drain-source On-volt: 1kV
• Gate-source Voltage (max): ±20V
• Drain Current (max): 3.1A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBG30PBF

IRFBG30, SiHFBG30
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
R
= 25 °C, I
DS
GS
GS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
J
Reference to 25 °C, I
= 12 Ω, R
= 25 °C, I
= 800 V, V
= 10 V
= 10 V
V
V
V
V
V
TYP.
f = 1.0 MHz, see fig. 5
0.50
TEST CONDITIONS
DS
DS
DD
DS
GS
-
-
= 1000 V, V
F
= V
= 500 V, I
= 10 V, I
= 0 V, I
V
V
= 3.1 A, dI/dt = 100 A/µs
V
GS
D
DS
S
GS
GS
GS
= 170 Ω, see fig. 10
= 3.1 A, V
I
= ± 20 V
D
, I
= 25 V,
= 0 V,
= 0 V, T
= 3.1 A, V
D
see fig. 6 and 13
D
D
= 250 µA
= 250 µA
D
= 1.9 A
GS
I
= 3.1 A
D
D
= 1.9 A
= 0 V
GS
= 1 mA
J
G
G
= 125 °C
DS
= 0 V
b
=400 V,
b
MAX.
D
S
b
D
S
1.0
62
b
b
-
b
MIN.
1000
2.0
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-81145-Rev. A, 02-Jun-08
Document Number: 91124
TYP.
980
140
410
1.4
4.5
7.5
1.3
50
12
25
89
29
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
S
100
500
620
4.0
5.0
3.1
1.8
2.0
80
10
42
12
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V