N CHANNEL MOSFET, 1KV, 3.1A, TO-220

IRFBG30PBF

Manufacturer Part NumberIRFBG30PBF
DescriptionN CHANNEL MOSFET, 1KV, 3.1A, TO-220
ManufacturerVishay
TypePower MOSFET
IRFBG30PBF datasheets
 


Specifications of IRFBG30PBF

Transistor PolarityN ChannelContinuous Drain Current Id3.1A
Drain Source Voltage Vds1kVOn Resistance Rds(on)5ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5 Ohm @ 1.9A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C3.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs80nC @ 10VInput Capacitance (ciss) @ Vds980pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Minimum Operating Temperature- 55 C
ConfigurationSingleResistance Drain-source Rds (on)5 Ohm @ 10 V
Drain-source Breakdown Voltage1000 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current3.1 APower Dissipation125000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res5Ohm
Drain-source On-volt1kVGate-source Voltage (max)±20V
Drain Current (max)3.1AOutput Power (max)Not RequiredW
Frequency (max)Not RequiredMHzNoise FigureNot RequireddB
Power GainNot RequireddBDrain EfficiencyNot Required%
Operating Temp Range-55C to 150COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3 +Tab
Package TypeTO-220ABLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names*IRFBG30PBF  
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Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
1
2
14.09 (.555)
13.47 (.530)
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
E XAMPL E :
T HIS IS AN IR F 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Document Number: 91124
3.78 (.149)
4.69 (.185)
3.54 (.139)
4.20 (.165)
- A -
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
MIN
3
4.06 (.160)
3.55 (.140)
0.93 (.037)
3X
0.69 (.027)
0.36 (.014)
M
B A M
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
Data and specifications subject to change without notice.
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
HEXFET
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
2- DRAIN
3 - SOURCE
2- COLLECTOR
3- SOURCE
3- EMITTER
4 - DRAIN
4- DRAIN
4- COLLECTOR
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
TAC Fax: (310) 252-7903
02/04
www.vishay.com
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