N CHANNEL MOSFET, 1KV, 3.1A, TO-220

IRFBG30PBF

Manufacturer Part NumberIRFBG30PBF
DescriptionN CHANNEL MOSFET, 1KV, 3.1A, TO-220
ManufacturerVishay
TypePower MOSFET
IRFBG30PBF datasheets
 


Specifications of IRFBG30PBF

Transistor PolarityN ChannelContinuous Drain Current Id3.1A
Drain Source Voltage Vds1kVOn Resistance Rds(on)5ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5 Ohm @ 1.9A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C3.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs80nC @ 10VInput Capacitance (ciss) @ Vds980pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Minimum Operating Temperature- 55 C
ConfigurationSingleResistance Drain-source Rds (on)5 Ohm @ 10 V
Drain-source Breakdown Voltage1000 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current3.1 APower Dissipation125000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res5Ohm
Drain-source On-volt1kVGate-source Voltage (max)±20V
Drain Current (max)3.1AOutput Power (max)Not RequiredW
Frequency (max)Not RequiredMHzNoise FigureNot RequireddB
Power GainNot RequireddBDrain EfficiencyNot Required%
Operating Temp Range-55C to 150COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3 +Tab
Package TypeTO-220ABLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names*IRFBG30PBF  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 8/8

Download datasheet (3Mb)Embed
Prev
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
®
®
®
®
®
®
®
®
International Rectifier
, IR
, the IR logo, HEXFET
, HEXSense
, HEXDIP
, DOL
, INTERO
, and POWIRTRAIN
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
www.vishay.com
Revision: 12-Mar-07
1