IRFF220 International Rectifier, IRFF220 Datasheet

N CH MOSFET, 200V, 3.5A, TO-205AF

IRFF220

Manufacturer Part Number
IRFF220
Description
N CH MOSFET, 200V, 3.5A, TO-205AF
Manufacturer
International Rectifier
Datasheet

Specifications of IRFF220

Transistor Polarity
N Channel
Continuous Drain Current Id
3.5A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFF220
Manufacturer:
ST/MOTO
Quantity:
20 000
Part Number:
IRFF220R
Manufacturer:
ST/MOTO
Quantity:
20 000
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-205AF)
Product Summary
The HEXFET
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 10V, T C = 100°C
I D @ V GS = 10V, T C = 25°C
www.irf.com
Part Number
IRFF220
P D @ T C = 25°C
T STG
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
®
®
technology is the key to International
TRANSISTORS
B
200V
VDSS
R
0.80Ω
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
3.5A
I
D
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
REF:MIL-PRF-19500/555
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
0.98(typical)
200V, N-CHANNEL
-55 to 150
0.242
2.25
0.16
±20
3.5
2.2
2.0
5.0
14
20
JANTXV2N6790
JANTX2N6790
T0-39
IRFF220
PD - 90427D
Units
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
g
1

Related parts for IRFF220

IRFF220 Summary of contents

Page 1

... For footnotes refer to the last page www.irf.com REF:MIL-PRF-19500/555 I D 3.5A Features: Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n 300 (0.063 in. (1.6mm) from case for 10s 90427D IRFF220 JANTX2N6790 JANTXV2N6790 200V, N-CHANNEL T0-39 Units 3 0.16 W/°C ±20 V 0.242 mJ 2 ...

Page 2

... IRFF220, JANTX2N6790, JANTXV2N6790 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com IRFF220, JANTX2N6790, JANTXV2N6790 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 ...

Page 4

... IRFF220, JANTX2N6790, JANTXV2N6790 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com 13 a & b ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFF220, JANTX2N6790, JANTXV2N6790 V GS ≤ 1 ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r Fig 10b. Switching Time Waveforms + - t t d(off ...

Page 6

... IRFF220, JANTX2N6790, JANTXV2N6790 D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 15V DRIVER + - (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit Vs ...

Page 7

... Case Outline and Dimensions —TO-205AF IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 www.irf.com IRFF220, JANTX2N6790, JANTXV2N6790 ƒ ≤ 3.5A, di/dt ≤ 95A/µ ≤ 200V ≤ 150°C Suggested RG =7.5 Ω ...

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