IRFM250 International Rectifier, IRFM250 Datasheet

N CH MOSFET, 200V, 27.4A, TO-254AA

IRFM250

Manufacturer Part Number
IRFM250
Description
N CH MOSFET, 200V, 27.4A, TO-254AA
Manufacturer
International Rectifier
Datasheet

Specifications of IRFM250

Transistor Polarity
N Channel
Continuous Drain Current Id
27.4A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFM250
Manufacturer:
NS
Quantity:
100
POWER MOSFET
THRU-HOLE (TO-254AA)
For footnotes refer to the last page
Absolute Maximum Ratings
HEXFET
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance.
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
I D @ V GS = 10V, T C = 100°C Continuous Drain Current
I D @ V GS = 10V, T C = 25°C
www.irf.com
Product Summary
Part Number
IRFM250
P D @ T C = 25°C
®
transistor’s totally isolated package eliminates the
MOSFET technology is the key to International
T STG
dv/dt
V GS
E AS
E AR
I DM
I AR
T J
R
0.100
DS(on)
Parameter
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
27.4A
I
D
HEXFET
REF:MIL-PRF-19500/592
HEXFET
300 ( 0.063 in.(1.6mm) from case for 10s)
Features:
n
n
n
n
n
n
Light-weight
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
®
MOSFET TECHNOLOGY
JANTXV2N7225
9.3 (Typical)
-55 to 150
200V, N-CHANNEL
JANTX2N7225
27.4
27.4
15.0
110
150
±20
500
1.2
5.0
17
TO-254AA
IRFM250
PD - 90554E
Units
W/°C
V/ns
mJ
mJ
o
A
W
V
A
C
g
1/9/01
1

Related parts for IRFM250

IRFM250 Summary of contents

Page 1

... HEXFET Features: n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Dynamic dv/dt Rating n Light-weight 27.4 110 150 ±20 500 27.4 15.0 -55 to 150 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical 90554E IRFM250 TO-254AA Units 1.2 W/° 5.0 V/ 1/9/01 ...

Page 2

... IRFM250 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse Q g Total Gate Charge ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com IRFM250 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 ...

Page 4

... IRFM250 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com 13a & b ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com D.U. 10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) Fig 10b. Switching Time Waveforms IRFM250 + ...

Page 6

... IRFM250 20V .01 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V Fig 13b. Gate Charge Test Circuit Vs. Drain Current Current Regulator 50K . D.U.T. ...

Page 7

... PIN AS S IGNMENT DRAIN OURCE 3 = GAT E CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/02 IRFM250 190A/ s, 150°C 300 s; Duty Cycle 2% 0.12 [.005] 6.60 [.260] 13.84 [.545] 13.59 [.535] 6 ...

Related keywords