IRFZ44RPBF Vishay, IRFZ44RPBF Datasheet

N CHANNEL MOSFET, 60V, 50A, TO-220

IRFZ44RPBF

Manufacturer Part Number
IRFZ44RPBF
Description
N CHANNEL MOSFET, 60V, 50A, TO-220
Manufacturer
Vishay
Datasheets

Specifications of IRFZ44RPBF

Transistor Polarity
N Channel
Continuous Drain Current Id
50A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFZ44RPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFZ44RPBF
Quantity:
5 900
Company:
Part Number:
IRFZ44RPBF
Quantity:
70 000
Company:
Part Number:
IRFZ44RPBF
Quantity:
70 000
Absolute Maximum Ratings
Thermal Resistance
Document Number: 91292
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Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
I
I
I
P
V
E
dv/dt
T
T
R
R
R
D
D
DM
J
STG
D
GS
AS
θJC
θCS
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Drop in Replacement of the IRFZ44
for Linear/Audio Applications
Lead-Free
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Pulsed Drain Current 
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Continuous Drain Current, V
Power Dissipation
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
300 (1.6mm from case )
10 lbf•in (1.1 N•m)
Typ.
0.50
–––
–––
-55 to + 175
HEXFET
IRFZ44RPbF
Max.
200
150
±20
100
50*
1.0
4.5
S
36
D
TO-220AB
®
R
Power MOSFET
DS(on)
Max.
V
–––
1.0
62
I
DSS
D
= 50*A
www.vishay.com
= 0.028Ω
= 60V
PD - 94823
Units
W/°C
V/ns
mJ
°C
W
A
V
Units
°C/W
1

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IRFZ44RPBF Summary of contents

Page 1

... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting Torque, 6- screw Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Document Number: 91292 IRFZ44RPbF HEXFET TO-220AB Max. @ 10V 50 10V 36 GS 200 150 1.0 ±20 100 4.5 - 175 300 (1 ...

Page 2

... IRFZ44RPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Document Number: 91292 IRFZ44RPbF 2.5 51A 2.0 1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 180 T , Junction Temperature ( C) J www.vishay.com V = 10V GS ° 3 ...

Page 4

... IRFZ44RPbF Document Number: 91292 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100us 1ms 10 10ms = 25 C ° ° 175 C J Single Pulse 100 V , Drain-to-Source Voltage (V) DS www.vishay.com 1000 4 ...

Page 5

... D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Document Number: 91292 90% 90% 125 150 175 ° 10% 10 0.001 0. Rectangular Pulse Duration (sec) 1 IRFZ44RPbF + - ≤ 1 ≤ 1 ≤ 0.1 % ≤ 0 d(on) d(on d(off) d(off Notes: 1. Duty factor ...

Page 6

... IRFZ44RPbF D.U 20V 0.01 Ω Charge Document Number: 91292 250 15V 200 DRIVER 150 + - 100 50 V (BR)DSS 0 25 Starting T , Junction Temperature ( TOP 21A 36A BOTTOM 51A 50 75 100 125 150 ° J Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D ...

Page 7

... Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Document Number: 91292 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% IRFZ44RPbF + - V =10V www.vishay.com 7 ...

Page 8

... IRFZ44RPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPL HIS 1010 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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