IXTH30N60L2 IXYS SEMICONDUCTOR, IXTH30N60L2 Datasheet - Page 3

• Manufacturer Part Number: IXTH30N60L2
• Description: MOSFET,N CH,600V,30A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXTH30N60L2

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 240mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes

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30
27
24
21
18
15
12
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
30
27
24
21
18
15
12
9
6
3
0
9
6
3
0
0
0
0
V
Fig. 5. R
1
GS
10
= 10V
2
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
3
DS(on)
20
4
2
vs. Drain Current
Normalized to I
30
5
V
I
DS
V
D
@ 125ºC
@ 25ºC
V
DS
- Amperes
GS
- Volts
6
V
40
- Volts
GS
= 20V
3
14V
12V
10V
9V
7
= 20V
12V
10V
9V
8
50
T
J
4
= 125ºC
D
9
= 15A Value
60
10
7V
6V
8V
5V
T
J
= 25ºC
11
5
8V
7V
6V
5V
70
12
80
13
6
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
70
60
50
40
30
20
10
35
30
25
20
15
10
0
5
0
-50
-50
0
Fig. 4. R
V
GS
Fig. 2. Extended Output Characteristics
-25
-25
= 10V
Fig. 6. Maximum Drain Current vs.
5
IXTH30N60L2 IXTQ30N60L2
DS(on)
vs. Junction Temperature
0
0
V
GS
Case Temperature
T
10
T
C
Normalized to I
J
= 20V
- Degrees Centigrade
25
25
- Degrees Centigrade
14V
12V
10V
V
DS
@ 25ºC
- Volts
15
50
50
9V
8V
7V
6V
I
75
75
D
IXTT30N60L2
20
= 30A
D
= 15A Value
100
100
IXYS REF: T_30N60L2(8R)01-20-09-A
25
I
125
125
D
= 15A
150
150
30