NTE2989 NTE ELECTRONICS, NTE2989 Datasheet
NTE2989
Manufacturer Part Number
NTE2989
Description
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,10A I(D),TO-220VAR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2989.pdf
(2 pages)
Specifications of NTE2989
Rohs Compliant
YES
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Features:
D High Speed Switching
D Low On–Resistance
D No Secondary Breakdown
D Low Driving Power
D High Voltage
D Repetitive Avalanche Rated
Applications:
D Switching Regulators
D UPS
D DC–DC Converters
D General Purpose Power Amplifier
Absolute Maximum Ratings: (T
Drain–Source Voltage, V
Drain Current, I
Gate–Source Voltage, V
Avalanche Current, Repetitive or Non–Repetitive (T
Avalanche Energy, E
Maximum Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Continuous
Pulsed
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
GS
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
N–Channel, Enhancement Mode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
D
= +25 C unless otherwise specified)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
J
High Speed Switch
V
= +25 C unless otherwise specified)
(BR)DSS
I
GS(th)
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
NTE2989
MOSFET
I
I
V
V
D
D
DS
GS
thJA
= 1mA, V
= 1mA, V
= 600V,
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
ch
GS
DS
+150 C), I
= 0V
= V
GS
T
T
ch
ch
= +25 C
= +125 C
AR
. . . . . . . . . . . . . . . . . . . . .
Min
600
3.5
–
–
Typ
4.0
0.2
10
–
–55 to +150 C
Max
500
4.5
1.0
–
62.5 C/W
2.5 C/W
+150 C
64.7mJ
600V
Unit
mA
50W
V
V
10A
36A
30V
10A
A
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NTE2989 Summary of contents
Page 1
... Maximum Power Dissipation, P Operating Junction Temperature, T Storage Temperature Range, T Thermal Resistance, Junction–to–Ambient, R Thermal Resistance, Junction–to–Case, R Electrical Characteristics: (T Parameter Drain–Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current NTE2989 MOSFET High Speed Switch = +25 C unless otherwise specified ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Gate–Source Leakage Current Drain–Source On–State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Time d(on) r Turn–Off Time ...