Features:
D Ultra Low On−Resistance
D Dynamic dv/dt Rating
D +175 C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
Absolute Maximum Ratings:
Drain Current, I
Total Power Dissipation (T
Gate−Source Voltage, V
Single Pulsed Avalanche Energy (I
Avalanche Current (Note 2), I
Repetitive Avalanche Energy (Note 2), E
Peak Diode Recovery dv/dt (Note 4), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
Maximum Thermal Resistance:
Typical Thermal Resistance, Case−to−Sink (Flat, greased surface), R
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. This is a calculated value limited to T
Note 4. I
Continuous (V
Pulsed (Note 2)
Derate Above 25 C
Junction−to−Case, R
Junction−to−Ambient, R
limitation current is 75A.
SD
T
T
C
C
= +25 C (Note 1)
= +100 C
62A, di/dt
D
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10V)
GS
N−Channel, Enhancement Mode
C
207A/ s, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AR
thJA
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
DD
= 62A, L = 138 H, Note 3), E
D
AR
J
NTE2991
MOSFET
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
J
= +175 C.
, T
J
+175 C.
AS
thCS
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
L
. . . . . . . . . .
−55 to +175 C
−55 to +175 C
0.75 C/W
0.50 C/W
1.3W/ C
62 C/W
5.0V/ns
+300 C
264mJ
200W
20mJ
390A
110A
80A
20V
62A