NTE2996 NTE ELECTRONICS, NTE2996 Datasheet

N CHANNEL MOSFET, 60V, 84A, TO-220

NTE2996

Manufacturer Part Number
NTE2996
Description
N CHANNEL MOSFET, 60V, 84A, TO-220
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2996

Transistor Polarity
N Channel
Continuous Drain Current Id
84A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features:
D Ultra Low On-Resistance
D Dynamic dv/dt Rating
D +175°C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
Absolute Maximum Ratings:
Drain Current, I
Total Power Dissipation (T
Gate-Source Voltage, V
Single Pulsed Avalanche Energy (I
Avalanche Current (Note 2), I
Repetitive Avalanche Energy (Note 2), E
Peak Diode Recovery dv/dt (Note 4), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
Maximum Thermal Resistance:
Typical Thermal Resistance, Case-to-Sink (Flat, greased surface), R
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. This is a calculated value limited to T
Note 4. I
Continuous (V
Pulsed (Note 2)
Derate Above 25°C
Junction-to-Case, R
Junction-to-Ambient, R
limitation current is 75A.
SD
T
T
C
C
≤ 50A, di/dt ≤ 230A/μs, V
= +25°C (Note 1)
= +100°C
D
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
= 10V)
N-Channel, Enhancement Mode
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AR
thJA
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
DD
= 50A, L = 260μH, Note 3), E
D
AR
≤ V
J
NTE2996
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
J
= +175°C.
, T
J
≤ +175°C.
AS
thCS
. . . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
L
. . . . . . . . . .
-55° to +175°C
-55° to +175°C
0.75°C/W
0.50°C/W
1.4W/°C
62°C/W
4.0V/ns
+300°C
320mJ
200W
17mJ
330A
±20V
84A
59A
50A

Related parts for NTE2996

NTE2996 Summary of contents

Page 1

... Note 3. This is a calculated value limited to T ≤ 50A, di/dt ≤ 230A/μs, V Note NTE2996 MOSFET High Speed Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source ON Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off ...

Page 3

Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...

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