SI4490DY-T1-E3 Vishay, SI4490DY-T1-E3 Datasheet

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SI4490DY-T1-E3

Manufacturer Part Number
SI4490DY-T1-E3
Description
N CHANNEL MOSFET, 200V, 4A, SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Datasheets

Specifications of SI4490DY-T1-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
4A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.85A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.85 A
Power Dissipation
1560 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.08Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4490DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4490DY-T1-E3
Quantity:
5 510
Part Number:
SI4490DY-T1-E3
Manufacturer:
VISHAY
Quantity:
10 000
Part Number:
SI4490DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4490DY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71341
S09-0705-Rev. C, 27-Apr-09
Ordering Information: Si4490DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
200
(V)
G
S
S
S
0.090 at V
0.080 at V
Si4490DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
R
DS(on)
J
a
Top View
SO-8
= 150 °C)
GS
GS
a
(Ω)
= 6.0 V
= 10 V
N-Channel 200-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
4.0
3.8
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
G
Symbol
Symbol
T
R
R
J
Definition
TrenchFET
V
V
I
N-Channel MOSFET
I
P
, T
I
DM
thJA
thJF
AS
I
DS
GS
D
S
D
stg
D
S
®
Power MOSFETs
Typical
10 s
4.0
3.2
2.6
3.1
2.0
33
65
17
- 55 to 150
± 20
200
40
15
Steady State
Maximum
2.85
1.56
2.3
1.3
1.0
40
80
21
Vishay Siliconix
Si4490DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4490DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4490DY-T1-E3 (Lead (Pb)-free) Si4490DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si4490DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71341 S09-0705-Rev. C, 27-Apr-09 2500 2000 1500 1000 °C J 0.8 1.0 1.2 Si4490DY Vishay Siliconix C iss 500 C rss C oss 120 V - Drain-to-Source Voltage (V) DS Capacitance 2 4 2.0 1.5 1.0 0.5 0.0 ...

Page 4

... Si4490DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0.5 I 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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