ZXMN10A08E6 Diodes Inc, ZXMN10A08E6 Datasheet - Page 2

• Manufacturer Part Number: ZXMN10A08E6
• Description: MOSFET, N CH, 100V, 1.9A, SOT-23
• Manufacturer: Diodes Inc

Specifications of ZXMN10A08E6

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.9A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 1.7W
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ZXMN10A08E6
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =10V; T A =25°C (b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
SYMBOL
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
T j :T stg
SYMBOL
R JA
R JA
2
-55 to +150
VALUE
LIMIT
1.21
13.6
113
100
1.5
1.2
5.3
2.5
5.3
1.1
8.8
1.7
73
20
ISSUE 1 - MARCH 2002
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
°C
W
W
V
V
A
A
A
A