ZXMN10A11G Diodes Inc, ZXMN10A11G Datasheet

MOSFET, N CH, 100V, 2.4A, SOT-223

ZXMN10A11G

Manufacturer Part Number
ZXMN10A11G
Description
MOSFET, N CH, 100V, 2.4A, SOT-223
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN10A11G

Transistor Polarity
N Channel
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
600mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
3.9W
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN10A11G
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
ZXMN10A11GTA
Manufacturer:
ZETEX
Quantity:
2 000
Part Number:
ZXMN10A11GTA
Manufacturer:
DIODES/美台
Quantity:
20 000
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 5 - DECEMBER 2004
DEVICE
ZXMN10A11GTA
ZXMN10A11GTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
DC - DC converters
Power management functions
Relay and solenoid driving
Motor control
ZXMN
10A11
= 100V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.35
WIDTH
12mm
12mm
TAPE
I
D
= 2.4A
QUANTITY
1000 units
4000 units
PER REEL
1
ZXMN10A11G
S E M I C O N D U C T O R S
Top View
PINOUT
SOT223

Related parts for ZXMN10A11G

ZXMN10A11G Summary of contents

Page 1

... Relay and solenoid driving • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN10A11GTA 7” 12mm ZXMN10A11GTC 13” 12mm DEVICE MARKING • ZXMN 10A11 ISSUE 5 - DECEMBER 2004 I = 2.4A D QUANTITY PER REEL 1000 units 4000 units 1 ZXMN10A11G SOT223 PINOUT Top View ...

Page 2

... ZXMN10A11G ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage Continuous drain current V =10V =10V =10V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) (a) Power dissipation at T =25°C A Linear derating factor (b) Power dissipation at T =25°C A Linear derating factor ...

Page 3

... ISSUE 5 - DECEMBER 2004 CHARACTERISTICS 3 ZXMN10A11G ...

Page 4

... ZXMN10A11G ELECTRICAL CHARACTERISTICS ( 25°C unless otherwise stated) PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source On-State resistance (3) Forward transconductance (3) DYNAMIC Input capacitance Output capacitance Reverse transfer capacitance (2) (3) SWITCHING Turn-on delay time ...

Page 5

... ISSUE 5 - DECEMBER 2004 TYPICAL CHARACTERISTICS 5 ZXMN10A11G ...

Page 6

... ZXMN10A11G TYPICAL CHARACTERISTICS 6 ISSUE 5 - DECEMBER 2004 ...

Page 7

... Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 7 ZXMN10A11G Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex ...

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