ZXMN10A25KTC Diodes Inc, ZXMN10A25KTC Datasheet

MOSFET, N CH, 100V, 6.4A, DPAK

ZXMN10A25KTC

Manufacturer Part Number
ZXMN10A25KTC
Description
MOSFET, N CH, 100V, 6.4A, DPAK
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN10A25KTC

Transistor Polarity
N Channel
Continuous Drain Current Id
6.4A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
125mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
9.85W
No. Of Pins
3
Configuration
Single
Resistance Drain-source Rds (on)
0.125 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.4 A
Power Dissipation
2.11 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN10A25KTC
Manufacturer:
ST
Quantity:
2 300
Company:
Part Number:
ZXMN10A25KTC
Quantity:
4 900
Company:
Part Number:
ZXMN10A25KTC
Quantity:
4 900
ZXMN10A25K
100V DPAK N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
10A25
Issue 2 - August 2006
© Zetex Semiconductors plc 2006
Device
ZXMN10A25KTC
Low on-resistance
Fast switching speed
Low gate drive
DPAK package
DC-DC converters
Power management functions
Disconnect switches
Motor control
V
(BR)DSS
100
0.125 @ V
0.150 @ V
R
Reel size
(inches)
DS(on)
13
GS
GS
(V)
= 10V
= 6V
Tape width
(mm)
16
I
D
6.4
5.8
(A)
1
Quantity
per reel
2,500
Pinout - top view
G
www.zetex.com
G
D
D
D
S
S

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ZXMN10A25KTC Summary of contents

Page 1

... Low gate drive • DPAK package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN10A25KTC 13 Device marking ZXMN 10A25 Issue 2 - August 2006 © Zetex Semiconductors plc 2006 ( 10V 6 5.8 ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at T =25°C (a) amb ...

Page 3

Thermal characteristics Issue 2 - August 2006 © Zetex Semiconductors plc 2006 ZXMN10A25K 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical characteristics Issue 2 - August 2006 © Zetex Semiconductors plc 2006 ZXMN10A25K 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 2 - August 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Issue 2 - August 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN10A25K www.zetex.com ...

Page 8

Package outline - DPAK DIM Inches Min Max A 0.086 0.094 A1 - 0.005 b 0.020 0.035 b2 0.030 0.045 b3 0.205 0.215 c 0.018 0.024 c2 0.018 0.023 D 0.213 0.245 D1 0.205 - E 0.250 0.265 E1 0.170 ...

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