2N6766 International Rectifier, 2N6766 Datasheet

N CH MOSFET, 200V, 30A, TO-204AE

2N6766

Manufacturer Part Number
2N6766
Description
N CH MOSFET, 200V, 30A, TO-204AE
Manufacturer
International Rectifier
Datasheet

Specifications of 2N6766

Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
85mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 10V, T C = 100°C
I D @ V GS = 10V, T C = 25°C
www.irf.com
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Part Number
IRF250
P D @ T C = 25°C
T STG
dv/dt
I DM
E AR
E AS
V GS
I AR
T J
B
200V
VDSS
R
0.085
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
30A
I
D
[REF:MIL-PRF-19500/543]
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
200V, N-CHANNEL
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
11.5 (typical)
TO-3
-55 to 150
JANTXV2N6766
120
150
±20
500
1.2
5.0
3 0
1 9
3 0
1 5
JANTX2N6766
IRF250
PD - 90338E
Units
W/°C
V/ns
o
mJ
mJ
W
A
A
V
g
C
01/22/01
1

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2N6766 Summary of contents

Page 1

... N-CHANNEL I D 30A Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling 300 (0.063 in. (1.6mm) from case for 10s 90338E IRF250 JANTX2N6766 JANTXV2N6766 TO-3 Units 120 150 W 1.2 W/°C ±20 V 500 5.0 V/ns ...

Page 2

IRF250 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain ...

Page 3

Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF250 3 ...

Page 4

IRF250 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area 13 a& b www.irf.com ...

Page 5

Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com D.U. 10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10% ...

Page 6

IRF250 10V 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature =50V, starting 25°C, Peak 30A, Case Outline and Dimensions —TO-204AE (Modified TO-3) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California ...

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