BSP149 Infineon Technologies, BSP149 Datasheet

N CH MOSFET, 200V, 480mA, SOT-223

BSP149

Manufacturer Part Number
BSP149
Description
N CH MOSFET, 200V, 480mA, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP149

Transistor Polarity
N Channel
Continuous Drain Current Id
480mA
Drain Source Voltage Vds
200V
On Resistance Rds(on)
3.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
-1.4V
Package
SOT-223
Vds (max)
200.0 V
Id (max)
0.66 A
Idpuls (max)
2.6 A
Rds (on) (max) (@10v)
1.8 Ohm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP149
Manufacturer:
INF
Quantity:
7 200
Part Number:
BSP149
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSP149
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSP149 H6327
Quantity:
4 800
Part Number:
BSP149H6327XTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.2
1)
SIPMOS
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
BSP149
BSP149
see table on next page and diagram 11
®
Small-Signal-Transistor
Package
PG-SOT-223
PG-SOT-223
GS(th)
indicator on reel
j
=25 °C, unless otherwise specified
Tape and Reel Information
L6327: 1000 pcs/reel
L6906: 1000 pcs/reel
sorted in V
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
GS(th)
T
T
T
I
V
di /dt =200 A/µs,
T
T
D
bands
A
A
A
j,max
A
DS
=0.66 A,
page 1
=25 °C
=70 °C
=25 °C
=25 °C
=160 V,
=150 °C
1)
Product Summary
V
R
I
DSS,min
DS
DS(on),max
Marking
BSP149
BSP149
-55 ... 150
55/150/56
Class 1
Value
0.66
0.53
±20
2.6
1.8
PG-SOT-223
6
0.14
200
3.5
BSP149
2005-11-28
Unit
A
kV/µs
V
W
°C
V
A

Related parts for BSP149

BSP149 Summary of contents

Page 1

... Symbol Conditions I T =25 ° =70 ° =25 °C D,pulse A I =0. =160 /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSP149 200 3.5 0.14 PG-SOT-223 Marking BSP149 BSP149 Value Unit 0.66 A 0.53 2.6 6 kV/µs ±20 V Class 1 1.8 W -55 ... 150 °C 55/150/56 2005-11- ...

Page 2

... D |V |>2 DS(on)max =0. =108 µA GS(th (single layer, 70 µm thick) copper area for page 2 Values min. typ. max 115 200 - -2 140 - - 1.7 3.5 - 1.0 1.8 , 0.4 0.8 -1 -1.35 - -1.15 -1.5 - -1.3 -1.65 - -1.45 -1.8 - -1.6 BSP149 Unit K µ 2005-11-28 ...

Page 3

... Rev. 1.2 Symbol Conditions C iss oss f =1 MHz C rss t d(on) V =100 =-2… =0. d(off =160 =0. =- plateau =25 ° S,pulse V =- =0. =25 ° =100 /dt =100 A/µ page 3 BSP149 Values Unit min. typ. max. - 326 430 5.1 7 3.4 5 0.74 1 5 2.6 - 0.9 1 2005-11-28 ...

Page 4

... V DS Rev. 1.2 2 Drain current I =f 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 120 160 4 Max. transient thermal impedance Z =f(t thJA parameter µs 100 µ [V] page 4 ≥ 120 T [° 0.5 0.2 0.1 0.05 single pulse 0.02 0. [s] p BSP149 160 2005-11-28 ...

Page 5

... Typ. drain-source on resistance R =f(I DS(on) parameter 0 0 [V] 8 Typ. forward transconductance g =f 1.2 1 0.8 0.6 0.4 0 0.00 [V] page =25 ° -0 0.2 V 0 0.2 0.4 0.6 I [A] D =25 °C j 0.10 0.20 0.30 0.40 0.50 I [A] D BSP149 0 0.8 1 0.60 0.70 2005-11-28 ...

Page 6

... GS Rev. 1.2 10 Typ. gate threshold voltage V =f(T GS(th) parameter -0.5 -1 -1.5 -2 -2.5 -3 100 140 180 -60 12 Typ. capacitances C =f 1000 J K 400 µA -1 -0.5 page =400 µ %98 typ %2 - 100 T [° MHz GS 100 [V] DS BSP149 140 180 Ciss Coss Crss 30 2005-11-28 ...

Page 7

... Drain-source breakdown voltage V =f =250 µA BR(DSS 240 200 160 -60 - [°C] j Rev. 1.2 15 Typ. gate charge V =f(Q GS parameter ° °C, 98 1.5 2 [V] 100 140 180 page =0.5 A pulsed gate D DD 0.2 VDS(max) 0.8 VDS(max [nC] gate BSP149 0.5 VDS(max 2005-11-28 ...

Page 8

... Package Outline: Footprint: Dimensions in mm Rev. 1.2 Packaging: page 8 BSP149 2005-11-28 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 9 BSP149 2005-11-28 ...

Related keywords