BSS131 Infineon Technologies, BSS131 Datasheet

N CH MOSFET, 240V, 100mA, SOT-23

BSS131

Manufacturer Part Number
BSS131
Description
N CH MOSFET, 240V, 100mA, SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSS131

Transistor Polarity
N Channel
Continuous Drain Current Id
100mA
Drain Source Voltage Vds
240V
On Resistance Rds(on)
16ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.4V
Package
SOT-23
Vds (max)
240.0 V
Rds (on) (max) (@10v)
14,000.0 mOhm
Rds (on) (max) (@4.5v)
20,000.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Rev. 2.1
Type
SIPMOS
Feature
• N-Channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
BSS131
BSS131
®
Small-Signal-Transistor
Package
PG-SOT23
PG-SOT23
j
=25 °C, unless otherwise specified
Ordering Code
Q62702-S565
Q67000-S229
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
Tape and Reel Information
E6327
E6433
T
T
T
I
di /dt =200 A/µs,
T
T
D
A
A
A
j,max
A
=0.1 A, V
page 1
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
Product Summary
V
R
I
=192 V,
D
DS
DS(on),max
-55 ... 150
55/150/56
Class 1a
Value
0.11
0.09
0.36
Marking
SRs
SRs
±20
0.4
PG-SOT-23
6
240
14
0.1
BSS131
2005-02-24
Unit
A
kV/µs
V
W
°C
V
A

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BSS131 Summary of contents

Page 1

... Symbol Conditions I T =25 ° =70 ° =25 °C D,pulse =192 /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSS131 240 V Ω 14 0.1 A PG-SOT-23 Marking SRs SRs Value Unit 0.11 A 0.09 0.4 6 kV/µs ±20 V Class 1a 0.36 W -55 ... 150 °C 55/150/56 2005-02-24 ...

Page 2

... Symbol Conditions R thJA =25 °C, unless otherwise specified =250 µA (BR)DSS =56 µA GS(th =240 (off) T =25 ° =240 =150 ° = GSS =4 =0.09 A DS( |>2 DS(on)max =0. page 2 Values min. typ. max 350 240 - 0.8 1 0.06 0.13 BSS131 Unit K µ Ω 2005-02-24 ...

Page 3

... V =120 = =0 Ω R d(off =192 plateau =25 ° S,pulse =0 =25 ° =120 /dt =100 A/µ page 3 BSS131 Values Unit min. typ. max 7 2.8 4.2 - 3.3 5 3.1 4 0.16 0. 0.8 1.2 - 2.1 3 0.43 - 0.81 1 42 2005-02-24 ...

Page 4

... Rev. 2.1 2 Drain current I =f 0.12 0.1 0.08 0.06 0.04 0.02 0 120 160 4 Max. transient thermal impedance Z =f(t thJA parameter µs 100 µ 0.1 0.05 100 0.02 DC 0.01 single pulse 0 10 100 1000 [V] page 4 ≥ 120 T [° [s] p BSS131 160 2005-02-24 ...

Page 5

... Typ. drain-source on resistance R =f(I DS(on) parameter [V] 8 Typ. forward transconductance g =f 0.3 0.25 0.2 0.15 0.1 0. [V] page =25 ° 2.3 V 2 0.1 0.2 I [A] D =25 °C j 0.0 0.1 0.2 0.3 I [A] D BSS131 3 0.3 0.4 0.4 2005-02-24 ...

Page 6

... Forward characteristics of reverse diode =25° parameter Ciss -2 10 Coss Crss - [V] page =56 µ typ 2 % -60 - 100 T [° 150 °C 25 °C 150 °C, 98% 25 °C, 98% 0 0.4 0.8 1.2 1 [V] SD BSS131 140 2.4 2.8 2005-02-24 ...

Page 7

... Typ. gate charge V =f =0.1 A pulsed GS gate D parameter 0 gate Rev. 2.1 14 Drain-source breakdown voltage V BR(DSS) 300 290 120V 280 270 260 192 V 250 240 230 220 210 200 1.5 2 2.5 [nC] page 7 =f =250 µ -60 - 100 T [°C] j BSS131 140 2005-02-24 ...

Page 8

... Package Outline: Footprint: Rev. 2.1 Packaging: page 8 BSS131 2005-02-24 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 9 BSS131 2005-02-24 ...

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