BSS138N Infineon Technologies, BSS138N Datasheet

N CHANNEL MOSFET, 60V, 230mA SOT-23

BSS138N

Manufacturer Part Number
BSS138N
Description
N CHANNEL MOSFET, 60V, 230mA SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSS138N

Transistor Polarity
N Channel
Continuous Drain Current Id
230mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
3.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Package
SOT-23
Vds (max)
60.0 V
Rds (on) (max) (@10v)
3,500.0 mOhm
Rds (on) (max) (@4.5v)
6,000.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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0
Rev. 2.5
SIPMOS
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
BSS138N
BSS138N
BSS138N
®
Small-Signal-Transistor
Package
PG-SOT-23
PG-SOT-23
PG-SOT-23
j
=25 °C, unless otherwise specified
Ordering Code
Q67042-S4184
Q67045-A5069
Q67042-S4190
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
Tape and Reel Information
E6327: 3000 pcs/reel
L6327: 3000 pcs/reel
E6433: 10000 pcs/reel
T
T
T
I
di /dt =200 A/µs,
T
T
D
A
A
A
j,max
A
=0.23 A, V
page 1
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
Product Summary
V
R
I
D
=48 V,
DS
DS(on),max
-55 ... 150
55/150/56
Class 0
Value
0.23
0.18
0.92
0.36
Marking
SKs
SKs
SKs
±20
PG-SOT-23
6
60
3.5
0.23
BSS138N
2006-05-17
Unit
A
kV/µs
V
W
°C
V
A

Related parts for BSS138N

BSS138N Summary of contents

Page 1

... =70 ° =25 °C D,pulse A I =0. = /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSS138N 60 V 3.5 0.23 A PG-SOT-23 Marking SKs SKs SKs Value Unit 0.23 A 0.18 0.92 6 kV/µs ±20 V Class 0 0.36 W -55 ... 150 °C 55/150/56 2006-05-17 ...

Page 2

... =250 µA (BR)DSS =26 µA GS(th = (off =25 ° = =150 ° = GSS =4 =0.03 A DS(on =4 =0. = =0. |>2 DS(on)max =0. page 2 Values min. typ. max 350 60 - 0.6 1 3.3 4.0 - 3.5 6.0 - 2.2 3.5 , 0.1 0.2 BSS138N Unit K µ 2006-05-17 ...

Page 3

... MHz C rss t d( =0. d(off = =0. plateau =25 ° S,pulse =0. =25 ° = =0. /dt =100 A/µ page 3 BSS138N Values Unit min. typ. max 7.2 9.5 - 2.8 3.8 - 2.3 3 3.0 4 8.2 12.3 - 0.10 0. 0.3 0.4 - 1.0 1 0.92 - 0.83 1 9 2006-05-17 ...

Page 4

... Rev. 2.5 2 Drain current I =f 0.25 0.2 0.15 0.1 0.05 0 120 160 4 Max. transient thermal impedance Z =f(t thJA parameter µ 100 µ 100 100 10 [V] page 4 ≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p BSS138N 160 1 2006-05-17 ...

Page 5

... Typ. drain-source on resistance R =f(I DS(on) parameter 4 3 3 [V] 8 Typ. forward transconductance g =f 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0. 0.00 [V] page =25 ° 3.2 V 2 0.1 0.2 0.3 I [A] D =25 °C j 0.10 0.20 0.30 I [A] D BSS138N 0.4 0.5 0.40 2006-05-17 ...

Page 6

... I 2 1.6 1.2 0.8 typ 0 100 140 -60 12 Forward characteristics of reverse diode =25° parameter Ciss -1 10 Coss -2 10 Crss - [V] page =26 µ %98 typ %2 - 100 T [° 150 °C, 98% 25 °C 25 °C, 98% 150 °C 0 0.4 0.8 1.2 1.6 V [V] SD BSS138N 140 2 2.4 2006-05-17 ...

Page 7

... Typ. gate charge V =f =0.23 A pulsed GS gate D parameter 0.2 0.4 Q gate Rev. 2.5 14 Drain-source breakdown voltage V BR(DSS 0.6 0.8 1 [nC] page 7 =f =250 µ -60 - 100 T [°C] j BSS138N 140 180 2006-05-17 ...

Page 8

... Package Outline: Footprint: Rev. 2.5 Packaging: page 8 BSS138N 2006-05-17 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.5 page 9 BSS138N 2006-05-17 ...

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