SI7409ADN-T1-GE3 Vishay, SI7409ADN-T1-GE3 Datasheet

P CH MOSFET, -30V, 11A, POWERPAK

SI7409ADN-T1-GE3

Manufacturer Part Number
SI7409ADN-T1-GE3
Description
P CH MOSFET, -30V, 11A, POWERPAK
Manufacturer
Vishay
Datasheet

Specifications of SI7409ADN-T1-GE3

Transistor Polarity
P Channel
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
31mohm
Rds(on) Test Voltage Vgs
-2.5V
Threshold Voltage Vgs Typ
-1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7409ADN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated)
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73246
S-83051-Rev. C, 29-Dec-08
Ordering Information: Si7409ADN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
DS
- 30
(V)
8
3.30 mm
D
7
D
0.019 at V
0.031 at V
6
PowerPAK 1212-8
D
R
5
Si7409ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
DS(on)
D
GS
GS
= - 4.5 V
= - 2.5 V
(Ω)
1
J
a
S
= 150 °C)
a
2
S
P-Channel 30-V (D-S) MOSFET
3
S
a
3.30 mm
4
I
- 8.5
D
- 11
G
(A)
a
b, c
A
Q
= 25 °C, unless otherwise noted
Steady State
Steady State
g
T
T
T
T
(Typ.)
25
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• V
• 100 % R
• Load Switch
Symbol
Symbol
T
R
R
J
Available
Package with Low 1.07 mm Profile
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
DS
D
S
D
stg
Optimized for Load Switch
g
Tested
®
Power MOSFET
Typical
- 7.9
- 3.2
10 s
- 11
3.8
2.0
1.9
26
65
G
- 55 to 150
P-Channel MOSFET
± 12
- 30
- 40
260
Steady State
Maximum
S
D
- 1.3
1.5
0.8
2.4
- 7
- 5
33
81
Vishay Siliconix
Si7409ADN
www.vishay.com
®
°C/W
Unit
Unit
°C
W
V
A
1

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SI7409ADN-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7409ADN-T1-E3 (Lead (Pb)-free) Si7409ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7409ADN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73246 S-83051-Rev. C, 29-Dec-08 4000 3200 2400 1600 °C J 0.8 1.0 1.2 Si7409ADN Vishay Siliconix C iss 800 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1.0 0.8 ...

Page 4

... Si7409ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.4 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on) I Limited DM 10 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73246. Document Number: 73246 S-83051-Rev. C, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7409ADN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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