2SK2220-E Renesas Electronics America, 2SK2220-E Datasheet
2SK2220-E
Specifications of 2SK2220-E
Related parts for 2SK2220-E
2SK2220-E Summary of contents
Page 1
... Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) Rev ...
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... Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature ° Note: 1. Value Electrical Characteristics Item Drain to source 2SK2220 breakdown voltage 2SK2221 Gate to source breakdown voltage ...
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... Typical Transfer Characteristics Gate to Source Voltage V Rev.2.00 Sep 07, 2005 page 100 150 (° ° ( (V) GS Maximum Safe Operation Area 25° 1.0 0.5 2SK2220 2SK2221 0 100 200 Drain to Source Voltage V (V) DS Typical Output Characteristics ° Drain to Source Voltage V (V) DS Typical Transfer Characteristics 1 ...
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... Forward Transfer Admittance vs. Frequency 5 1 25°C 0 0.01 0.001 0.0005 100 k Frequency f (Hz) Switching Time Test Circuit Input µs 50 Ω duty ratio = 1% Rev.2.00 Sep 07, 2005 page Output Switching Time vs. Drain Current 500 t on 200 100 50 t off 0.1 0.2 0.5 1 ...
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... PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part Name 2SK2220-E 360 pcs 2SK2221-E 360 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page Package Name MASS[Typ ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...