2SK3562 Toshiba, 2SK3562 Datasheet

MOSFET, N, 600V, TO-220SIS

2SK3562

Manufacturer Part Number
2SK3562
Description
MOSFET, N, 600V, TO-220SIS
Manufacturer
Toshiba
Datasheet

Specifications of 2SK3562

Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.25ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Transistor Case
RoHS Compliant
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes

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Switching Regulator Applications
Maximum Ratings
Thermal Characteristics
This transistor is an electrostatic-sensitive device. Please handle with caution.
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
= 90 V, T
GS
DC
Pulse (t = 1 ms)
= 20 kΩ)
(Ta = 25°C)
ch
DSS
th
= 25°C(initial), L = 16.8 mH, I
(Note 1)
(Note 1)
(Note 2)
= 2.0~4.0 V (V
= 100 μA (V
DS (ON)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
AR
stg
| = 5.0S (typ.)
AS
D
ch
R
D
R
DS
2SK3562
Symbol
DS
th (ch-c)
th (ch-a)
= 0.9Ω (typ.)
= 600 V)
= 10 V, I
-55~150
Rating
D
600
600
±30
345
150
AR
24
40
6
6
4
1
3.125
= 1 mA)
Max
62.5
= 6 A, R
G
Unit
mJ
mJ
°C/W
°C/W
°C
°C
W
V
V
V
A
A
Unit
= 25 Ω
Weight : 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
1
1: Gate
2: Drain
3: Source
2-10U1B
SC-67
2004-07-01
2SK3562
2
3
Unit: mm

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2SK3562 Summary of contents

Page 1

... DS D Symbol Rating Unit V 600 V DSS V 600 V DGR ± GSS 345 150 ° -55~150 °C stg Symbol Max Unit R 3.125 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω 2SK3562 Unit Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ 2004-07-01 ...

Page 2

... Q gd (Ta = 25°C) Symbol Test Condition ⎯ ⎯ I DRP = DSF /dt = 100 A/ µ 2SK3562 Min Typ. Max Unit ⎯ ⎯ ± 10 µ A ± 30 ⎯ ⎯ V ⎯ ⎯ µ A 100 ⎯ ⎯ 600 V ⎯ 2.0 4.0 V ⎯ Ω 0.9 1.25 ⎯ 1.2 5.0 S ⎯ ...

Page 3

... DRAIN-SOURCE VOLTAGE GATE-SOURCE VOLTAGE (ON) 10 COMMON SOURCE Tc = 25°C PULSE TEST V、15V 0.1 10 0.1 DRAIN CURRENT I 3 2SK3562 – COMMON SOURCE Tc = 25°C PULSE TEST 4.8 4.6 4.4 4 (V) DS – COMMON SOURCE Tc = 25℃ PULSE TEST 1 (V) GS – (A) D 2004-07-01 ...

Page 4

... COMMON SOURCE PULSE TEST 0 −80 −40 100 0 (V) CASE TEMPERATURE Tc (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 500 400 V DS 300 200 100 0 200 0 10 TOTAL GATE CHARGE Q 4 2SK3562 I – − −0.6 −1 −1.2 −0.8 ( – 120 160 100 V 200 12 400 8 COMMON SOURCE ...

Page 5

... R th (ch-c) = 3.125°C/W 10m 100m 1 PULSE WIDTH t ( 500 400 300 200 100 CHANNEL TEMPERATURE (INITIAL − TEST CIRCUIT = 25 Ω 16.8mH 2SK3562 10 – 100 125 150 (°C) B VDSS WAVE FORM ⎛ ⎞ VDSS 2 I ⎜ ⎟ = ⋅ ⋅ ⋅ L Ε AS ⎜ ...

Page 6

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2SK3562 030619EAA 2004-07-01 ...

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