BSS138P NXP Semiconductors, BSS138P Datasheet
BSS138P
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BSS138P Summary of contents
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... BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching ...
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... T amb drain current amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET Simplified outline Graphic symbol [1] Marking code AN* Min - - [ ° 100 ° ≤ ...
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... I der (%) −75 − × ------------------- - I = 100 % der 25°C Normalized continuous drain current as a function of ambient temperature BSS138P Max Unit 350 mW 420 mW 1140 mW °C 150 °C +150 °C +150 360 017aaa002 125 175 T (°C) amb © NXP B.V. 2010. All rights reserved. ...
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... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET 017aaa111 (1) (2) (3) (4) (5) ( (V) DS Min Typ ...
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... FR4 PCB, mounting pad for drain 1 cm Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138P Product data sheet − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET 017aaa015 (s) p 017aaa016 ...
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... 250 μ 0 ° 150 ° ± [ 300 [ 200 300 mA 4 250 Ω Ω 115 mA 0.47 GS BSS138P Typ Max Unit - - V 1.2 1.5 V μ μ 100 nA Ω Ω 0.9 1.6 700 - mS 0.72 0 0.75 1.1 V © NXP B.V. 2010. All rights reserved. ...
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... I = 300 150 °C (1) T amb = 25 °C (2) T amb Drain-source on-state resistance as a function of gate-source voltage; typical values BSS138P 017aaa113 (3) 1.5 2.0 V (V) GS 017aaa115 (1) (2) 8.0 10.0 V (V) GS © NXP B.V. 2010. All rights reserved ...
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... C (pF) 120 180 T (°C) amb (1) C (2) C (3) C Fig 13. Input, output and reverse transfer All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET 2.4 1.8 1.2 0.6 0.0 − 120 R DSon ----------------------------- ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...
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... Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138P Product data sheet P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET 006aaa812 © NXP B.V. 2010. All rights reserved ...
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... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET 2 0.6 (3×) Dimensions in mm Dimensions in mm preferred transport direction during soldering © NXP B.V. 2010. All rights reserved. ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date BSS138P v.1 20101102 BSS138P Product data sheet Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BSS138P All rights reserved. Date of release: 2 November 2010 Document identifier: BSS138P ...