MOSFET,N CH,60V,0.36A,SOT23

BSS138P

Manufacturer Part NumberBSS138P
DescriptionMOSFET,N CH,60V,0.36A,SOT23
ManufacturerNXP Semiconductors
BSS138P datasheet
 

Specifications of BSS138P

Transistor PolarityN ChannelDrain Source Voltage Vds60V
On Resistance Rds(on)0.9ohmRds(on) Test Voltage Vgs10V
Voltage Vgs Max20VOperating Temperature Range-55°C To +150°C
Transistor CaseRoHS CompliantTransistor Case StyleSOT-23
Rohs CompliantYes  
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BSS138P
60 V, 360 mA N-channel Trench MOSFET
Rev. 1 — 2 November 2010
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm
[2]
Pulse test: t
Quick reference data
Parameter
Conditions
= 25 °C
drain-source voltage
T
amb
= 25 °C
gate-source voltage
T
amb
= 25 °C;
drain current
T
amb
V
= 10 V
GS
= 25 °C;
drain-source on-state
T
j
resistance
V
= 10 V;
GS
I
= 300 mA
D
2
.
≤ 300 μs; δ ≤ 0.01.
p
Product data sheet
Min
Typ
Max
Unit
-
-
60
V
±20
-
-
V
[1]
-
-
360
mA
Ω
[2]
-
0.9
1.6

BSS138P Summary of contents

  • Page 1

    ... BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching ...

  • Page 2

    ... T amb drain current amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET Simplified outline Graphic symbol [1] Marking code AN* Min - - [ ° 100 ° ≤ ...

  • Page 3

    ... I der (%) −75 − × ------------------- - I = 100 % der 25°C Normalized continuous drain current as a function of ambient temperature BSS138P Max Unit 350 mW 420 mW 1140 mW °C 150 °C +150 °C +150 360 017aaa002 125 175 T (°C) amb © NXP B.V. 2010. All rights reserved. ...

  • Page 4

    ... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET 017aaa111 (1) (2) (3) (4) (5) ( (V) DS Min Typ ...

  • Page 5

    ... FR4 PCB, mounting pad for drain 1 cm Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138P Product data sheet − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET 017aaa015 (s) p 017aaa016 ...

  • Page 6

    ... 250 μ 0 ° 150 ° ± [ 300 [ 200 300 mA 4 250 Ω Ω 115 mA 0.47 GS BSS138P Typ Max Unit - - V 1.2 1.5 V μ μ 100 nA Ω Ω 0.9 1.6 700 - mS 0.72 0 0.75 1.1 V © NXP B.V. 2010. All rights reserved. ...

  • Page 7

    ... I = 300 150 °C (1) T amb = 25 °C (2) T amb Drain-source on-state resistance as a function of gate-source voltage; typical values BSS138P 017aaa113 (3) 1.5 2.0 V (V) GS 017aaa115 (1) (2) 8.0 10.0 V (V) GS © NXP B.V. 2010. All rights reserved ...

  • Page 8

    ... C (pF) 120 180 T (°C) amb (1) C (2) C (3) C Fig 13. Input, output and reverse transfer All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET 2.4 1.8 1.2 0.6 0.0 − 120 R DSon ----------------------------- ...

  • Page 9

    ... Q (nC °C amb Fig 15. Gate charge waveform definitions 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...

  • Page 10

    ... Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138P Product data sheet P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET 006aaa812 © NXP B.V. 2010. All rights reserved ...

  • Page 11

    ... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION ...

  • Page 12

    ... All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET 2 0.6 (3×) Dimensions in mm Dimensions in mm preferred transport direction during soldering © NXP B.V. 2010. All rights reserved. ...

  • Page 13

    ... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date BSS138P v.1 20101102 BSS138P Product data sheet Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET ...

  • Page 14

    ... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...

  • Page 15

    ... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138P 60 V, 360 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...

  • Page 16

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BSS138P All rights reserved. Date of release: 2 November 2010 Document identifier: BSS138P ...