BUK6213-30C NXP Semiconductors, BUK6213-30C Datasheet
BUK6213-30C
Specifications of BUK6213-30C
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BUK6213-30C Summary of contents
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... BUK6213-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 4 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... N-channel TrenchMOS intermediate level FET Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C Graphic symbol mbb076 Version SOT428 © NXP B.V. 2010. All rights reserved ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C Min Max - 30 [1] -20 20 [2] -16 16 Figure Figure 189 - 60 -55 175 -55 175 - 47 - 189 = 50 Ω ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C 0 50 100 150 T =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6213-30C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C Min Typ Max - - 2.52 003aae915 t δ ...
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... Ω R G(ext) from upper edge of drain mounting base to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C Min Typ Max = 25 ° -55 ° 1.8 2.3 2 3.3 0.8 ...
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... A; dI /dt = -100 A/µ 003aae916 (A) D Fig 6. 003aae918 R DSon (mΩ ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C N-channel TrenchMOS intermediate level FET Min Typ = 25 ° 31 300 μ ° Output characteristics: drain current as a function of drain-source voltage ...
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... Product data sheet 003aad805 (A) 120 180 T (°C) j Fig 10. Sub-threshold drain current as a function of 003aae920 4 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C N-channel TrenchMOS intermediate level FET - min typ max - ...
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... Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae922 (A) C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C N-channel TrenchMOS intermediate level FET ° charge ...
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... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C N-channel TrenchMOS intermediate level FET min 10.4 2.95 2.285 4.57 0.5 9 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6213-30C v.1 20101004 BUK6213-30C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6213-30C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 October 2010 Document identifier: BUK6213-30C ...