BUK662R5-30C NXP Semiconductors, BUK662R5-30C Datasheet

MOSFET,N CH,30V,100A,SOT404

BUK662R5-30C

Manufacturer Part Number
BUK662R5-30C
Description
MOSFET,N CH,30V,100A,SOT404
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK662R5-30C

Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
2.4mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
D2-PAK
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
Rev. 2 — 14 October 2010
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 25 A;
Figure 11
= 25 °C;
Figure 2
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
2.4
Max Unit
30
100
204
2.8
V
A
W
mΩ

Related parts for BUK662R5-30C

BUK662R5-30C Summary of contents

Page 1

... BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 14 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... V; see GS see Figure 14 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol G ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C Min Max - 30 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 [3] Figure 1 - 100 - 783 - 204 -55 175 ...

Page 4

... BUK662R5-30C Product data sheet 003aae559 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C N-channel TrenchMOS intermediate level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK662R5-30C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C Min Typ Max - - 0.74 003aae531 t P δ ...

Page 6

... Figure Ω Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...

Page 7

... A/µ 003aae532 90 120 150 I (A) D Fig 6. 003aae781 = 25 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C N-channel TrenchMOS intermediate level FET Min Typ - 0 240 10.0 6.0 5 (A) 180 120 0.5 1 Output characteristics: drain current as a function of drain-source voltage ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 003aae782 4.5 5.0 6.0 10.0 180 240 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C N-channel TrenchMOS intermediate level FET 4 3 max @1mA 2 typ @1mA min @2.5mA 120 ...

Page 9

... Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae538 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C N-channel TrenchMOS intermediate level FET 25°C and I ...

Page 10

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK662R5-30C v.2 20101014 • Modifications: Status changed from objective to product. BUK662R5-30C v.1 20100923 BUK662R5-30C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 BUK662R5-30C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 October 2010 Document identifier: BUK662R5-30C ...

Related keywords