BUK663R5-30C NXP Semiconductors, BUK663R5-30C Datasheet
BUK663R5-30C
Specifications of BUK663R5-30C
Related parts for BUK663R5-30C
BUK663R5-30C Summary of contents
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... BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 November 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... V; see GS see Figure 14 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol G ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C Min Max - 30 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 [3] Figure 1 - 100 - 616 - 158 -55 175 ...
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... P der (%) 150 200 T (°C) mb Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C N-channel TrenchMOS intermediate level FET 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 ms ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK663R5-30C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C Min Typ Max - - 0.95 003aae304 δ ...
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... Ω R G(ext) from upper edge of drain mounting base to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C Min Typ Max = 25 ° -55 ° 1.8 2.3 2 3.3 ...
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... A/µ 003aae307 = 25 ° (V) GS Fig 6. 003aae312 ( (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C N-channel TrenchMOS intermediate level FET Min Typ = 25 ° 125 g fs (S) 100 Forward transconductance as a function of drain current; typical values 100 ...
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... Fig 10. Sub-threshold drain current as a function of 003aae310 a 4.0 1.5 4.5 5.0 0.5 6 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C N-channel TrenchMOS intermediate level FET -1 -2 min typ max - gate-source voltage − ...
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... Product data sheet Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae309 (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C N-channel TrenchMOS intermediate level FET ( 14V charge; typical values 100 I S ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK663R5-30C v.2 20101116 • Modifications: Status changed from objective to product. • Various changes to content. BUK663R5-30C v.1 20100521 BUK663R5-30C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 November 2010 BUK663R5-30C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 November 2010 Document identifier: BUK663R5-30C ...